Phosphorus monolayer doping (MLD) of silicon on insulator (SOI) substrates

Show simple item record

dc.contributor.author Kennedy, Noel
dc.contributor.author Duffy, Ray
dc.contributor.author Eaton, Luke
dc.contributor.author Garvey, Shane
dc.contributor.author Connolly, James
dc.contributor.author Hatem, Chris
dc.contributor.author Holmes, Justin D.
dc.contributor.author Long, Brenda
dc.date.accessioned 2018-08-30T08:56:35Z
dc.date.available 2018-08-30T08:56:35Z
dc.date.issued 2018-08-06
dc.identifier.citation Kennedy, N., Duffy, R., Eaton, L., O'Connell, D., Monaghan, S., Garvey, S., Connolly, J.,Hatem, C., Holmes, J. D. and Long, B. (2018) 'Phosphorus monolayer doping (MLD) of silicon on insulator (SOI) substrates', Beilstein Journal of Nanotechnology, 9, pp. 2106-2113. doi: 10.3762/bjnano.9.199 en
dc.identifier.volume 9 en
dc.identifier.startpage 2106 en
dc.identifier.endpage 2113 en
dc.identifier.issn 2190-4286
dc.identifier.uri http://hdl.handle.net/10468/6686
dc.identifier.doi 10.3762/bjnano.9.199
dc.description.abstract This paper details the application of phosphorus monolayer doping of silicon on insulator substrates. There have been no previous publications dedicated to the topic of MLD on SOI, which allows for the impact of reduced substrate dimensions to be probed. The doping was done through functionalization of the substrates with chemically bound allyldiphenylphosphine dopant molecules. Following functionalization, the samples were capped and annealed to enable the diffusion of dopant atoms into the substrate and their activation. Electrical and material characterisation was carried out to determine the impact of MLD on surface quality and activation results produced by the process. MLD has proven to be highly applicable to SOI substrates producing doping levels in excess of 1 × 1019 cm−3 with minimal impact on surface quality. Hall effect data proved that reducing SOI dimensions from 66 to 13 nm lead to an increase in carrier concentration values due to the reduced volume available to the dopant for diffusion. Dopant trapping was found at both Si–SiO2 interfaces and will be problematic when attempting to reach doping levels achieved by rival techniques. en
dc.description.sponsorship Enterprise Ireland (project IP-2015-0368); European Regional Development Fund (ERDF under Ireland’s European Structural and Investment Funds Programmes 2014–2020) en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher Beilstein-Institut en
dc.relation.uri https://www.beilstein-journals.org/bjnano/content/pdf/2190-4286-9-199.pdf
dc.rights © 2018 Kennedy et al.; licensee Beilstein-Institut. This is an Open Access article under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/4.0). Please note that the reuse, redistribution and reproduction in particular requires that the authors and source are credited. The license is subject to the Beilstein Journal of Nanotechnology terms and conditions: (https://www.beilstein-journals.org/bjnano) The definitive version of this article is the electronic one which can be found at: doi:10.3762/bjnano.9.199 en
dc.rights.uri http://creativecommons.org/licenses/by/4.0 en
dc.subject CMOS en
dc.subject Doping en
dc.subject Monolayer en
dc.subject Silicon en
dc.subject Silicon on insulator (SOI) en
dc.title Phosphorus monolayer doping (MLD) of silicon on insulator (SOI) substrates en
dc.type Article (peer-reviewed) en
dc.internal.authorcontactother Justin D. Holmes, Chemistry, University College Cork, Cork, Ireland. +353-21-490-3000 Email: j.holmes@ucc.ie en
dc.internal.availability Full text available en
dc.date.updated 2018-08-24T13:30:57Z
dc.description.version Published Version en
dc.internal.rssid 450781413
dc.contributor.funder Enterprise Ireland en
dc.contributor.funder European Regional Development Fund en
dc.description.status Peer reviewed en
dc.identifier.journaltitle Beilstein Journal of Nanotechnology en
dc.internal.copyrightchecked No !!CORA!! en
dc.internal.licenseacceptance Yes en
dc.internal.IRISemailaddress j.holmes@ucc.ie en


Files in this item

This item appears in the following Collection(s)

Show simple item record

© 2018 Kennedy et al.; licensee Beilstein-Institut. This is an Open Access article under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/4.0). Please note that the reuse, redistribution and reproduction in particular requires that the authors and source are credited. The license is subject to the Beilstein Journal of Nanotechnology terms and conditions: (https://www.beilstein-journals.org/bjnano) The definitive version of this article is the electronic one which can be found at: doi:10.3762/bjnano.9.199 Except where otherwise noted, this item's license is described as © 2018 Kennedy et al.; licensee Beilstein-Institut. This is an Open Access article under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/4.0). Please note that the reuse, redistribution and reproduction in particular requires that the authors and source are credited. The license is subject to the Beilstein Journal of Nanotechnology terms and conditions: (https://www.beilstein-journals.org/bjnano) The definitive version of this article is the electronic one which can be found at: doi:10.3762/bjnano.9.199
This website uses cookies. By using this website, you consent to the use of cookies in accordance with the UCC Privacy and Cookies Statement. For more information about cookies and how you can disable them, visit our Privacy and Cookies statement