Fully porous GaN p-n junctions fabricated by chemical vapor deposition: a green technology towards more efficient LEDs
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Date
2015-05
Authors
Carvajal, Joan J.
Mena, Josue
Bilousov, Oleksandr V.
Martínez, Oscar
Jiménez, Juan J.
Zubialevich, Vitaly Z.
Parbrook, Peter J.
Geaney, Hugh
O'Dwyer, Colm
Diaz, Francesc
Journal Title
Journal ISSN
Volume Title
Publisher
Electrochemical Society
Published Version
Abstract
Porous GaN based LEDs produced by corrosion etching techniques have demonstrated enhanced light extraction efficiencies in the past. However, these fabrication techniques require further post-growth processing steps, which increase the price of the final device. In this paper, we review the process we developed for the formation of fully porous GaN p-n junctions directly during growth, using a sequential chemical vapor deposition (CVD) process to produce the different layers that form the p-n junction.
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Keywords
Chemical vapor deposition , Deposition , Energy gap , Gallium nitride , Light emitting diodes , Semiconductor devices , Semiconductor junctions , Semiconductor materials
Citation
Carvajal, J. J., Mena, J., Bilousov, O., Martínez, O., Jiménez, J., Zubialevich, V. Z., Parbrook, P. J., Geaney, H., O'Dwyer, C., Díaz, F. and Aguiló, M. (2015) '(Invited) Fully Porous GaN p-n Junctions Fabricated by Chemical Vapor Deposition: A Green Technology towards More Efficient LEDs', ECS Transactions, 66(1), pp. 163-176. doi: 10.1149/06601.0163ecst
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© 2015 ECS - The Electrochemical Society