Fully porous GaN p-n junctions fabricated by chemical vapor deposition: a green technology towards more efficient LEDs

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dc.contributor.author Carvajal, Joan J.
dc.contributor.author Mena, Josue
dc.contributor.author Bilousov, Oleksandr V.
dc.contributor.author Martínez, Oscar
dc.contributor.author Jiménez, Juan J.
dc.contributor.author Zubialevich, Vitaly Z.
dc.contributor.author Parbrook, Peter J.
dc.contributor.author Geaney, Hugh
dc.contributor.author O'Dwyer, Colm
dc.contributor.author Diaz, Francesc
dc.contributor.author Aguilo, Magdalena
dc.date.accessioned 2018-08-30T15:45:04Z
dc.date.available 2018-08-30T15:45:04Z
dc.date.issued 2015-05
dc.identifier.citation Carvajal, J. J., Mena, J., Bilousov, O., Martínez, O., Jiménez, J., Zubialevich, V. Z., Parbrook, P. J., Geaney, H., O'Dwyer, C., Díaz, F. and Aguiló, M. (2015) '(Invited) Fully Porous GaN p-n Junctions Fabricated by Chemical Vapor Deposition: A Green Technology towards More Efficient LEDs', ECS Transactions, 66(1), pp. 163-176. doi: 10.1149/06601.0163ecst en
dc.identifier.volume 66 en
dc.identifier.issued 1 en
dc.identifier.startpage 163 en
dc.identifier.endpage 176 en
dc.identifier.issn 1938-5862
dc.identifier.uri http://hdl.handle.net/10468/6692
dc.identifier.doi 10.1149/06601.0163ecst
dc.description.abstract Porous GaN based LEDs produced by corrosion etching techniques have demonstrated enhanced light extraction efficiencies in the past. However, these fabrication techniques require further post-growth processing steps, which increase the price of the final device. In this paper, we review the process we developed for the formation of fully porous GaN p-n junctions directly during growth, using a sequential chemical vapor deposition (CVD) process to produce the different layers that form the p-n junction. en
dc.description.sponsorship Ministerio de Economía, Industria y Competitividad, Gobierno de España (Spanish Government under Projects No. MAT2011-29255-C02-02 and MAT2013-47395-C4-4-R); Generalitat de Catalunya (Catalan Government under Project No. 2014SGR1358, and JCYL (VA293U13)); Institució Catalana de Recerca i Estudis Avançats (ICREA Academia Award for Excellence in Research) en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher Electrochemical Society en
dc.relation.uri http://ecst.ecsdl.org/content/66/1/163.abstract
dc.rights © 2015 ECS - The Electrochemical Society en
dc.subject Chemical vapor deposition en
dc.subject Deposition en
dc.subject Energy gap en
dc.subject Gallium nitride en
dc.subject Light emitting diodes en
dc.subject Semiconductor devices en
dc.subject Semiconductor junctions en
dc.subject Semiconductor materials en
dc.title Fully porous GaN p-n junctions fabricated by chemical vapor deposition: a green technology towards more efficient LEDs en
dc.type Article (peer-reviewed) en
dc.internal.authorcontactother Colm O'Dwyer, Chemistry, University College Cork, Cork, Ireland. +353-21-490-3000 Email: c.odwyer@ucc.ie en
dc.internal.availability Full text available en
dc.date.updated 2018-05-16T00:54:41Z
dc.description.version Accepted Version en
dc.internal.rssid 302464866
dc.contributor.funder Ministerio de Economía, Industria y Competitividad, Gobierno de España en
dc.contributor.funder Generalitat de Catalunya en
dc.contributor.funder Institució Catalana de Recerca i Estudis Avançats en
dc.description.status Peer reviewed en
dc.identifier.journaltitle ECS Transactions en
dc.internal.copyrightchecked Yes en
dc.internal.licenseacceptance Yes en
dc.internal.IRISemailaddress c.odwyer@ucc.ie en


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