Towards electrochemical fabrication of free-standing indium phosphide nanofilms

Show simple item record

dc.contributor.author Quill, Nathan
dc.contributor.author O'Dwyer, Colm
dc.contributor.author Buckley, D. Noel
dc.contributor.author Lynch, Robert P.
dc.date.accessioned 2018-08-31T09:28:38Z
dc.date.available 2018-08-31T09:28:38Z
dc.date.issued 2015-10
dc.identifier.citation Quill, N., O'Dwyer, C., Buckley, D. N. & Lynch, R. P. (2015) 'Towards Electrochemical Fabrication of Free-Standing Indium Phosphide Nanofilms'. ECS Transactions, 69 (14):33-48. doi: 10.1149/06914.0033ecst en
dc.identifier.volume 69 en
dc.identifier.issued 14 en
dc.identifier.startpage 33 en
dc.identifier.endpage 48 en
dc.identifier.issn 1938-5862
dc.identifier.uri http://hdl.handle.net/10468/6694
dc.identifier.doi 10.1149/06914.0033ecst
dc.description.abstract The formation of sub-surface truncated tetrahedral voids beneath suspended ~40 nm thick dense InP shelves is achievable via a two-step etching method. The first step involves the electrochemical anodisation of n-type InP in aqueous KOH electrolyte resulting in the formation of truncated tetrahedral domains of pores beneath an ~40 nm thick dense surface layer with an individual pit that penetrates the dense surface layer of each domain. The second step involves the preferential chemical etching of these porous domains with only limited etching of the surrounding bulk InP and dense surface layer. The resulting structure of each domain is a truncated tetrahedral void with a dense InP layer suspended above it. This new technique may be a very useful tool in the fabrication of devices based on III-V semiconductors and it may be possible to extend the technique to the fabrication of free-standing InP nanofilms. en
dc.description.sponsorship Irish Research Council (IRC PhD scholarships); Higher Education Authority (Tyndall National Institute through National Access Programme Funding) en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher Electrochemical Society en
dc.relation.uri http://ecst.ecsdl.org/content/69/14/33.full.pdf+html
dc.rights © 2015 ECS - The Electrochemical Society en
dc.subject Fabrication en
dc.subject Electrolytes en
dc.subject Etching en
dc.subject Anodisation en
dc.subject Chemical etching en
dc.subject Dense surface layer en
dc.subject Electrochemical fabrication en
dc.subject II-IV semiconductors en
dc.subject Porous domain en
dc.subject Sub-surfaces en
dc.subject Two-step etching method en
dc.title Towards electrochemical fabrication of free-standing indium phosphide nanofilms en
dc.type Article (peer-reviewed) en
dc.internal.authorcontactother Colm O'Dwyer, Chemistry, University College Cork, Cork, Ireland. +353-21-490-3000 Email: c.odwyer@ucc.ie en
dc.internal.availability Full text available en
dc.date.updated 2018-05-16T00:24:54Z
dc.description.version Accepted Version en
dc.internal.rssid 320376915
dc.contributor.funder Irish Research Council en
dc.contributor.funder Seventh Framework Programme en
dc.contributor.funder Higher Education Authority en
dc.description.status Peer reviewed en
dc.identifier.journaltitle ECS Transactions en
dc.internal.copyrightchecked No !!CORA!! en
dc.internal.licenseacceptance Yes en
dc.internal.IRISemailaddress c.odwyer@ucc.ie en
dc.relation.project info:eu-repo/grantAgreement/EC/FP7::SP3::PEOPLE/229520/EU/IRCSET International Mobility Fellowships in Science Engineering and Technology: co-funded by Marie Curie Actions/INSPIRE en


Files in this item

This item appears in the following Collection(s)

Show simple item record

This website uses cookies. By using this website, you consent to the use of cookies in accordance with the UCC Privacy and Cookies Statement. For more information about cookies and how you can disable them, visit our Privacy and Cookies statement