Porous to non-porous transition in the morphology of metal assisted etched silicon nanowires

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dc.contributor.author Lotty, Olan
dc.contributor.author Petkov, Nikolay
dc.contributor.author Georgiev, Yordan M.
dc.contributor.author Holmes, Justin D.
dc.date.accessioned 2018-09-04T14:23:47Z
dc.date.available 2018-09-04T14:23:47Z
dc.date.issued 2012-11-20
dc.identifier.citation Olan, L., Nikolay, P., Yordan, M. G. and Justin, D. H. (2012) 'Porous to Nonporous Transition in the Morphology of Metal Assisted Etched Silicon Nanowires', Japanese Journal of Applied Physics, 51(11S), 11PE03 (5 pp). doi: 10.1143/JJAP.51.11PE03 en
dc.identifier.startpage 11PE03-1 en
dc.identifier.endpage 11PE03-5 en
dc.identifier.issn 0021-4922
dc.identifier.issn 1347-4065
dc.identifier.uri http://hdl.handle.net/10468/6705
dc.identifier.doi 10.1143/JJAP.51.11PE03
dc.description.abstract A single step metal assisted etching (MAE) process, utilizing metal ion-containing HF solutions in the absence of an external oxidant, has been developed to generate heterostructured Si nanowires with controllable porous (isotropically etched) and non-porous (anisotropically etched) segments. Detailed characterisation of both the porous and non-porous sections of the Si nanowires was provided by transmission electron microscopy studies, enabling the mechanism of nanowire roughening to be ascertained. The versatility of the MAE method for producing heterostructured Si nanowires with varied and controllable textures is discussed in detail. en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher IOP Publishing en
dc.relation.uri http://iopscience.iop.org/article/10.1143/JJAP.51.11PE03
dc.rights © 2012 The Japan Society of Applied PhysicsThis is an author-created, un-copyedited version of an article accepted for publication in the Japanese Journal of Applied Physics. The publisher is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at https://doi.org/10.1143/JJAP.51.11PE03 en
dc.subject Porous silicon en
dc.subject Metal ions en
dc.subject Nanowires en
dc.subject Silicon en
dc.subject Transmission electron microscopy en
dc.subject HF solutions en
dc.subject Si nanowire en
dc.subject Silicon nanowires en
dc.subject Single-step en
dc.title Porous to non-porous transition in the morphology of metal assisted etched silicon nanowires en
dc.type Article (peer-reviewed) en
dc.internal.authorcontactother Justin D. Holmes, Chemistry, University College Cork, Cork, Ireland. +353-21-490-3000 Email: j.holmes@ucc.ie en
dc.internal.availability Full text available en
dc.date.updated 2018-08-06T14:11:59Z
dc.description.version Submitted Version en
dc.internal.rssid 180957222
dc.contributor.funder Seventh Framework Programme en
dc.description.status Peer reviewed en
dc.identifier.journaltitle Japanese Journal of Applied Physics en
dc.internal.copyrightchecked No !!CORA!! en
dc.internal.licenseacceptance Yes en
dc.internal.IRISemailaddress j.holmes@ucc.ie en
dc.relation.project info:eu-repo/grantAgreement/EC/FP7::SP1::ICT/257856/EU/Semiconducting Nanowire Platform for Autonomous Sensors/SINAPS en


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