Probing thermal flux in twinned Ge nanowires through Raman spectroscopy

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dc.contributor.author Majumdar, Dipanwita
dc.contributor.author Biswas, Subhajit
dc.contributor.author Ghoshal, Tandra
dc.contributor.author Holmes, Justin D.
dc.contributor.author Singha, Achintya
dc.date.accessioned 2018-09-12T10:43:28Z
dc.date.available 2018-09-12T10:43:28Z
dc.date.issued 2015-11
dc.identifier.citation Majumdar, D., Biswas, S., Ghoshal, T., Holmes, J. D. and Singha, A. (2015) 'Probing Thermal Flux in Twinned Ge Nanowires through Raman Spectroscopy', ACS Applied Materials & Interfaces, 7(44), pp. 24679-24685. doi: 10.1021/acsami.5b07025 en
dc.identifier.volume 7 en
dc.identifier.issued 44 en
dc.identifier.startpage 24679 en
dc.identifier.endpage 24685 en
dc.identifier.issn 1944-8244
dc.identifier.uri http://hdl.handle.net/10468/6755
dc.identifier.doi 10.1021/acsami.5b07025
dc.description.abstract We report a noninvasive optical technique based on micro-Raman spectroscopy to study the temperature-dependent phonon behavior of normal (nondefective) and twinned germanium nanowires (Ge-NWs). We studied thermophysical properties of Ge-NWs from Raman spectra, measured by varying excitation laser power at ambient condition. We derived the laser-induced temperature rise during Raman measurements by analyzing the Raman peak position for both the NWs, and for a comparative study we performed the same for bulk Ge. The frequency of the Ge–Ge phonon mode softens for all the samples with the increase in temperature, and the first-order temperature coefficient (χT) for defected NWs is found to be higher than normal NWs and bulk. We demonstrated that apart from the size, the lamellar twinning and polytype phase drastically affect the heat transport properties of NWs. en
dc.description.sponsorship Science Foundation Ireland (International Strategic Cooperation Award (ISCA) India−Ireland program) en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher American Chemical Society (ACS) en
dc.relation.uri https://pubs.acs.org/doi/10.1021/acsami.5b07025
dc.rights © 2015 American Chemical Society. This document is the Accepted Manuscript version of a Published Work that appeared in final form in ACS Applied Materials & Interfaces, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see https://pubs.acs.org/doi/10.1021/acsami.5b07025 en
dc.subject Germanium nanowire en
dc.subject Laser-induced heating en
dc.subject Polytype phase en
dc.subject Raman spectroscopy en
dc.subject Thermal properties en
dc.title Probing thermal flux in twinned Ge nanowires through Raman spectroscopy en
dc.type Article (peer-reviewed) en
dc.internal.authorcontactother Justin D. Holmes, Chemistry, University College Cork, Cork, Ireland. +353-21-490-3000 Email: j.holmes@ucc.ie en
dc.internal.availability Full text available en
dc.date.updated 2018-08-20T15:21:49Z
dc.description.version Accepted Version en
dc.internal.rssid 328413201
dc.contributor.funder Science Foundation Ireland en
dc.description.status Peer reviewed en
dc.identifier.journaltitle Acs Applied Materials & Interfaces en
dc.internal.copyrightchecked No !!CORA!! en
dc.internal.licenseacceptance Yes en
dc.internal.IRISemailaddress j.holmes@ucc.ie en
dc.relation.project info:eu-repo/grantAgreement/SFI/SFI Investigator Programme/14/IA/2513/IE/Silicon Compatible, Direct Band-Gap Nanowire Materials For Beyond-CMOS Devices/ en


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