Probing thermal flux in twinned Ge nanowires through Raman spectroscopy
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Accepted version
Date
2015-11
Authors
Majumdar, Dipanwita
Biswas, Subhajit
Ghoshal, Tandra
Holmes, Justin D.
Singha, Achintya
Journal Title
Journal ISSN
Volume Title
Publisher
American Chemical Society (ACS)
Published Version
Abstract
We report a noninvasive optical technique based on micro-Raman spectroscopy to study the temperature-dependent phonon behavior of normal (nondefective) and twinned germanium nanowires (Ge-NWs). We studied thermophysical properties of Ge-NWs from Raman spectra, measured by varying excitation laser power at ambient condition. We derived the laser-induced temperature rise during Raman measurements by analyzing the Raman peak position for both the NWs, and for a comparative study we performed the same for bulk Ge. The frequency of the Ge–Ge phonon mode softens for all the samples with the increase in temperature, and the first-order temperature coefficient (χT) for defected NWs is found to be higher than normal NWs and bulk. We demonstrated that apart from the size, the lamellar twinning and polytype phase drastically affect the heat transport properties of NWs.
Description
Keywords
Germanium nanowire , Laser-induced heating , Polytype phase , Raman spectroscopy , Thermal properties
Citation
Majumdar, D., Biswas, S., Ghoshal, T., Holmes, J. D. and Singha, A. (2015) 'Probing Thermal Flux in Twinned Ge Nanowires through Raman Spectroscopy', ACS Applied Materials & Interfaces, 7(44), pp. 24679-24685. doi: 10.1021/acsami.5b07025
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Copyright
© 2015 American Chemical Society. This document is the Accepted Manuscript version of a Published Work that appeared in final form in ACS Applied Materials & Interfaces, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see https://pubs.acs.org/doi/10.1021/acsami.5b07025