Influence of growth kinetics on Sn incorporation in direct band gap Ge1−xSnx nanowires

Show simple item record Doherty, Jessica Biswas, Subhajit Saladukha, Dzianis Ramasse, Quentin Bhattacharya, Tara Shankar Singha, Achintya Ochalski, Tomasz J. Holmes, Justin D. 2018-09-13T11:41:17Z 2018-09-13T11:41:17Z 2018-07-25
dc.identifier.citation Doherty, J., Biswas, S., Saladukha, D., Ramasse, Q., Bhattacharya, T. S., Singha, A., Ochalski, T. J. and Holmes, J. D. (2018) 'Influence of growth kinetics on Sn incorporation in direct band gap Ge1−xSnx nanowires', Journal of Materials Chemistry C, 6(32), pp. 8738-8750. doi: 10.1039/C8TC02423E en
dc.identifier.volume 6 en
dc.identifier.issued 32 en
dc.identifier.startpage 8738 en
dc.identifier.endpage 8750 en
dc.identifier.issn 2050-7526
dc.identifier.doi 10.1039/C8TC02423E
dc.description.abstract Ge1−xSnx alloys with substantial incorporation of Sn show promise as direct bandgap group IV semiconductors. This article reports the influence of growth kinetics on Sn inclusion in Ge1−xSnx alloy nanowires through manipulation of the growth constraints, i.e. temperature, precursor type and catalyst. Ge1−xSnx nanowire growth kinetics were manipulated in a vapour–liquid–solid (VLS) growth process by varying the growth temperature between 425 and 470 °C, using Au and Ag alloys as growth catalysts and different tin precursors such as allyltributytin, tertaethyltin and tetraallyltin. The profound impact of growth kinetics on the incorporation of Sn; from 7 to 9 at%; in Ge1−xSnx nanowires was clearly apparent, with the fastest growing nanowires (of comparable diameter) containing a higher amount of Sn. A kinetically dependent “solute trapping” process was assigned as the primary inclusion mechanism for Sn incorporation in the Ge1−xSnx nanowires. The participation of a kinetic dependent, continuous Sn incorporation process in the single-step VLS nanowire growth resulted in improved ordering of the Ge1−xSnx alloy lattice; as opposed to a randomly ordered alloy. The amount of Sn inclusion and the Sn impurity ordering in Ge1−xSnx nanowires has a profound effect on the quality of the light emission and on the directness of the band gap as confirmed by temperature dependent photoluminescence study and electron energy loss spectroscopy. en
dc.description.sponsorship Irish Research Council (Grant No. GOIPG/2015/2772) en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher Royal Society of Chemistry (RSC) en
dc.rights © The Royal Society of Chemistry 2018 en
dc.subject Growth kinetics en
dc.subject Catalysts en
dc.subject Electron energy loss spectroscopy en
dc.subject Electron scattering en
dc.subject Energy dissipation en
dc.subject Energy gap en
dc.subject Gold alloys en
dc.subject Kinetics en
dc.subject Nanowires en
dc.subject Semiconductor alloys en
dc.subject Silver alloys en
dc.title Influence of growth kinetics on Sn incorporation in direct band gap Ge1−xSnx nanowires en
dc.type Article (peer-reviewed) en
dc.internal.authorcontactother Justin D. Holmes, Chemistry, University College Cork, Cork, Ireland. +353-21-490-3000 Email: en
dc.internal.availability Full text available en Access to this article is restricted until 12 months after publication by request of the publisher. en 2019-07-25 2018-08-21T16:32:04Z
dc.description.version Accepted Version en
dc.internal.rssid 450401291
dc.contributor.funder Science Foundation Ireland en
dc.contributor.funder Irish Research Council en
dc.description.status Peer reviewed en
dc.identifier.journaltitle Journal of Materials Chemistry C en
dc.internal.copyrightchecked No !!CORA! en
dc.internal.licenseacceptance Yes en
dc.internal.IRISemailaddress en
dc.relation.project info:eu-repo/grantAgreement/SFI/SFI Investigator Programme/14/IA/2513/IE/Silicon Compatible, Direct Band-Gap Nanowire Materials For Beyond-CMOS Devices/ en
dc.relation.project info:eu-repo/grantAgreement/SFI/SFI US Ireland R&D Partnership/14/US/I3057/IE/Si-compatible, Strain Engineered Staggered Gap Ge(Sn)/InxGa1-xAs Nanoscale Tunnel Field Effect Transistors/ en

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