Fabrication of ordered, large scale, horizontally aligned Si nanowire arrays based on an in-situ hard mask block copolymer approach

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dc.contributor.author Ghoshal, Tandra
dc.contributor.author Senthamaraikannan, Ramsankar
dc.contributor.author Shaw, Matthew T.
dc.contributor.author Holmes, Justin D.
dc.contributor.author Morris, Michael A.
dc.date.accessioned 2018-09-13T14:46:02Z
dc.date.available 2018-09-13T14:46:02Z
dc.date.issued 2013-11-26
dc.identifier.citation Ghoshal, T., Senthamaraikannan, R., Shaw, M. T., Holmes, J. D. and Morris, M. A. (2014) 'Fabrication of Ordered, Large Scale, Horizontally-Aligned Si Nanowire Arrays Based on an In Situ Hard Mask Block Copolymer Approach', Advanced Materials, 26(8), pp. 1207-1216. doi: 10.1002/adma.201304096 en
dc.identifier.volume 26 en
dc.identifier.issued 8 en
dc.identifier.startpage 1207 en
dc.identifier.endpage 1216 en
dc.identifier.issn 0935-9648
dc.identifier.issn 1521-4095
dc.identifier.uri http://hdl.handle.net/10468/6779
dc.identifier.doi 10.1002/adma.201304096
dc.description.abstract A simple technique is demonstrated to fabricate horizontal, uniform, and hexagonally arranged Sinanowire arrays with controlled orientation and density at spatially well defined locations on a substrate based on an in situ hard-mask pattern-formation approach by microphase-separated block-copolymer thin films. The technique may have significant application in the manufacture of transistor circuitry. en
dc.description.sponsorship Science Foundation Ireland through Semiconductor Research Corporation (2011-IN-2194 grant); en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher Wiley en
dc.relation.uri https://onlinelibrary.wiley.com/doi/abs/10.1002/adma.201304096
dc.rights © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. This is the peer reviewed version of the following article: Ghoshal, T. , Senthamaraikannan, R. , Shaw, M. T., Holmes, J. D. and Morris, M. A. (2014), Fabrication of Ordered, Large Scale, Horizontally‐Aligned Si Nanowire Arrays Based on an In Situ Hard Mask Block Copolymer Approach. Adv. Mater., 26: 1207-1216., which has been published in final form at https://doi.org/10.1002/adma.201304096. This article may be used for non-commercial purposes in accordance with Wiley Terms and Conditions for Self-Archiving. en
dc.subject Block copolymers en
dc.subject Nanowires en
dc.subject Patterning en
dc.subject Silicon en
dc.subject Photoelectron spectroscopy en
dc.title Fabrication of ordered, large scale, horizontally aligned Si nanowire arrays based on an in-situ hard mask block copolymer approach en
dc.type Article (peer-reviewed) en
dc.internal.authorcontactother Justin D. Holmes, Chemistry, University College Cork, Cork, Ireland. +353-21-490-3000 Email: j.holmes@ucc.ie en
dc.internal.availability Full text available en
dc.date.updated 2018-08-07T12:55:51Z
dc.description.version Accepted Version en
dc.internal.rssid 246626145
dc.contributor.funder Science Foundation Ireland en
dc.contributor.funder Semiconductor Research Corporation en
dc.description.status Peer reviewed en
dc.identifier.journaltitle Advanced Materials en
dc.internal.copyrightchecked No !!CORA!! en
dc.internal.licenseacceptance Yes en
dc.internal.IRISemailaddress j.holmes@ucc.ie en
dc.relation.project info:eu-repo/grantAgreement/SFI/SFI Starting Investigator Research Grant (SIRG)/09/SIRG/I1621/IE/Tuning surface and dopant properties of silicon and germanium nanowires for high performance nanowire-based field-effect transistors/ en


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