Parallel arrays of sub-10 nm aligned germanium nanofins from an in-situ metal oxide hardmask using directed self-assembly of block copolymers

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dc.contributor.author Cummins, Cian
dc.contributor.author Gangnaik, Anushka S.
dc.contributor.author Kelly, Róisín A.
dc.contributor.author Hydes, Alan J.
dc.contributor.author O'Connell, John
dc.contributor.author Petkov, Nikolay
dc.contributor.author Georgiev, Yordan M.
dc.contributor.author Borah, Dipu
dc.contributor.author Holmes, Justin D.
dc.contributor.author Morris, Michael A.
dc.date.accessioned 2018-09-14T14:25:10Z
dc.date.available 2018-09-14T14:25:10Z
dc.date.issued 2015-08-11
dc.identifier.citation Cummins, C., Gangnaik, A., Kelly, R. A., Hydes, A. J., O’Connell, J., Petkov, N., Georgiev, Y. M., Borah, D., Holmes, J. D. and Morris, M. A. (2015) 'Parallel Arrays of Sub-10 nm Aligned Germanium Nanofins from an In Situ Metal Oxide Hardmask using Directed Self-Assembly of Block Copolymers', Chemistry of Materials, 27(17), pp. 6091-6096. doi:10.1021/acs.chemmater.5b02608 en
dc.identifier.volume 27 en
dc.identifier.issued 17 en
dc.identifier.startpage 6091 en
dc.identifier.endpage 6096 en
dc.identifier.issn 0897-4756
dc.identifier.uri http://hdl.handle.net/10468/6792
dc.identifier.doi 10.1021/acs.chemmater.5b02608
dc.description.abstract High-mobility materials and non-traditional device architectures are of key interest in the semiconductor industry because of the need to achieve higher computing speed and low power consumption. In this article, we present an integrated approach using directed self-assembly (DSA) of block copolymers (BCPs) to form aligned line-space features through graphoepitaxy on germanium on insulator (GeOI) substrates. Ge is an example of a high mobility material (III–V, II–VI) where the chemical activity of the surface and its composition sensitivity to etch processing offers considerable challenges in fabrication compared to silicon (Si). We believe the methods described here afford an opportunity to develop ultrasmall dimension patterns from these important high-mobility materials. High-quality metal oxide enhanced pattern transfer to Ge is demonstrated for the realization of nanofins with sub-10 nm feature size. Graphoepitaxial alignment of a poly(styrene)-block-poly(4-vinylpyridine) (PS-b-P4VP) BCP was achieved using predefined hydrogen silsesquioxane (HSQ) topography at a GeOI substrate. Subsequent impregnation of the aligned BCP templates with a salt precursor in situ and simple processing was used to generate robust metal oxide nanowire (e.g., Fe3O4, γ-Al2O3, and HfO2) hardmask arrays. Optimized plasma based dry etching of the oxide modified substrate allowed the formation of high aspect ratio Ge nanofin features within the HSQ topographical structure. We believe the methodology developed has significant potential for high-resolution device patterning of high mobility semiconductors. We envision that the aligned Ge nanofin arrays prepared here via graphoepitaxy might have application as a replacement channel material for complementary metal–oxide–semiconductor (CMOS) devices and integrated circuit (IC) technology. Furthermore, the low capital required to produce Ge nanostructures with DSA technology may be an attractive route to address technological and economic challenges facing the nanoelectronic and semiconductor industry. en
dc.description.sponsorship Science Foundation Ireland ((SFI Grant 09/IN.1/602) AMBER SFI Centre (Grant 12/ RC/2278)); Semiconductor Research Corporation (GRC Task 2444.001) en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher American Chemical Society (ACS) en
dc.relation.uri https://pubs.acs.org/doi/10.1021/acs.chemmater.5b02608
dc.rights This document is the Accepted Manuscript version of a Published Work that appeared in final form in Chemistry of Materials, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see https://pubs.acs.org/doi/10.1021/acs.chemmater.5b02608 en
dc.subject In situ processing en
dc.subject Aspect ratio en
dc.subject Block copolymers en
dc.subject Electron beam lithography en
dc.subject Field effect transistors en
dc.subject Germanium en
dc.subject Impregnation en
dc.subject Metallic compounds en
dc.subject Metals en
dc.subject MOS devices en
dc.subject Self assembly en
dc.subject Semiconducting germanium en
dc.subject Semiconductor device manufacture en
dc.subject Semiconductor devices en
dc.subject Styrene en
dc.subject Substrates en
dc.title Parallel arrays of sub-10 nm aligned germanium nanofins from an in-situ metal oxide hardmask using directed self-assembly of block copolymers en
dc.type Article (peer-reviewed) en
dc.internal.authorcontactother Justin D. Holmes, Chemistry, University College Cork, Cork, Ireland. +353-21-490-3000 Email: j.holmes@ucc.ie en
dc.internal.availability Full text available en
dc.date.updated 2018-08-08T10:22:42Z
dc.description.version Accepted Version en
dc.internal.rssid 318345264
dc.description.status Peer reviewed en
dc.identifier.journaltitle Chemistry of Materials en
dc.internal.copyrightchecked No !!CORA!! en
dc.internal.licenseacceptance Yes en
dc.internal.IRISemailaddress j.holmes@ucc.ie en
dc.relation.project info:eu-repo/grantAgreement/SFI/SFI Research Centres/12/RC/2278/IE/Advanced Materials and BioEngineering Research Centre (AMBER)/ en


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