Nanoscale measurements of phosphorous-induced lattice expansion in nanosecond laser annealed germanium

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dc.contributor.author Boninelli, Simona
dc.contributor.author Milazzo, R
dc.contributor.author Carles, Robert
dc.contributor.author Houdellier, Florent
dc.contributor.author Duffy, Ray
dc.contributor.author Huet, Karim
dc.contributor.author La Magna, Antonio
dc.contributor.author Napolitani, E
dc.contributor.author Cristiano, Fuccio
dc.date.accessioned 2018-09-20T15:53:47Z
dc.date.available 2018-09-20T15:53:47Z
dc.date.issued 2018
dc.identifier.citation Boninelli, S., Milazzo, R., Carles, R., Houdellier, F., Duffy, R., Huet, K., La Magna, A., Napolitani, E. and Cristiano, F. (2018) 'Nanoscale measurements of phosphorous-induced lattice expansion in nanosecond laser annealed germanium', APL Materials, 6(5), 058504 (7pp). doi: 10.1063/1.5022876 en
dc.identifier.volume 6
dc.identifier.issued 5
dc.identifier.startpage 1
dc.identifier.endpage 7
dc.identifier.issn 2166-532X
dc.identifier.uri http://hdl.handle.net/10468/6846
dc.identifier.doi 10.1063/1.5022876
dc.description.abstract Laser Thermal Annealing (LTA) at various energy densities was used to recrystallize and activate amorphized germanium doped with phosphorous by ion implantation. The structural modifications induced during the recrystallization and the related dopant diffusion were first investigated. After LTA at low energy densities, the P electrical activation was poor while the dopant distribution was mainly localized in the polycrystalline Ge resulting from the anneal. Conversely, full dopant activation (up to 1 x 10(20) cm(-3)) in a perfectly recrystallized material was observed after annealing at higher energy densities. Measurements of lattice parameters performed on the fully activated structures show that P doping results in a lattice expansion, with a perpendicular lattice strain per atom beta(Ps) = +0.7 +/- 0.1 angstrom(3). This clearly indicates that, despite the small atomic radius of P compared to Ge, the "electronic contribution" to the lattice parameter modification (due to the increased hydrostatic deformation potential in the conduction band of P doped Ge) is larger than the "size mismatch contribution" associated with the atomic radii. Such behavior, predicted by theory, is observed experimentally for the first time, thanks to the high sensitivity of the measurement techniques used in this work. (c) 2018 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license. en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher AIP Publishing en
dc.relation.uri https://aip.scitation.org/doi/10.1063/1.5022876
dc.rights © 2018, the Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/). en
dc.rights.uri http://creativecommons.org/licenses/by/4.0/
dc.subject Beam electron-diffraction en
dc.subject Si en
dc.subject Semiconductors en
dc.subject Activation en
dc.subject Photonics en
dc.subject Silicon en
dc.subject Strain en
dc.title Nanoscale measurements of phosphorous-induced lattice expansion in nanosecond laser annealed germanium en
dc.type Article (peer-reviewed) en
dc.internal.authorcontactother Ray Duffy, Tyndall National Institute, University College Cork, Cork, Ireland + 353 21 234 6644, Email: ray.duffy@tyndall.ie en
dc.internal.availability Full text available en
dc.description.version Published Version en
dc.description.status Peer reviewed en
dc.identifier.journaltitle APL Materials en
dc.internal.IRISemailaddress ray.duffy@tyndall.ie en
dc.identifier.articleid 58504


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© 2018, the Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/). Except where otherwise noted, this item's license is described as © 2018, the Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).
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