dc.contributor.author |
Dinh, Duc V. |
|
dc.contributor.author |
Parbrook, Peter J. |
|
dc.date.accessioned |
2018-09-24T08:49:27Z |
|
dc.date.available |
2018-09-24T08:49:27Z |
|
dc.date.issued |
2018-08-23 |
|
dc.identifier.citation |
Dinh, D. V. and Parbrook, P. J. (2018) 'Control growth orientation of semipolar GaN layers grown on 3C-SiC/(001) Si', Journal of Crystal Growth, 501, pp. 34-37. doi:10.1016/j.jcrysgro.2018.08.021 |
en |
dc.identifier.volume |
501 |
en |
dc.identifier.startpage |
34 |
en |
dc.identifier.endpage |
37 |
en |
dc.identifier.issn |
0022-0248 |
|
dc.identifier.uri |
http://hdl.handle.net/10468/6867 |
|
dc.identifier.doi |
10.1016/j.jcrysgro.2018.08.021 |
|
dc.description.abstract |
Heteroepitaxial growth of GaN buffer layers on 3C-SiC/(001) Si substrates (4°-miscut towards [110]) by metalorganic vapour phase epitaxy has been investigated. High-temperature grown AlxGa1-xN/AlN interlayers were employed to control GaN surface orientations. Semipolar GaN layers with (101¯1), (202¯3) and (101¯2) surface orientations were achieved, as confirmed by X-ray diffraction. Due to the substrate miscut, the growth of (101¯1) layers was twinned along [11¯0]3C-SiC/Si and [1¯10]3C-SiC/Si while the growth of (202¯3) and (101¯2) layers was only along [110]3C-SiC/Si. The (101¯1) layers have rough surface morphology while the (202¯3) and (101¯2) layers have mirror-like smooth surface. For all samples with various surface orientations, different photoluminescence peak emission energies were observed at ∼3.45 eV, 3.78 eV and 3.27 eV at 10 K. These emissions are attributed to the near-band edge of hexagonal GaN, basal-plane stacking faults and partial dislocations, respectively. The dominant luminescence intensity of stacking faults indicates their high density in the GaN layers. |
en |
dc.description.sponsorship |
Science Foundation Ireland (Professorship) |
en |
dc.format.mimetype |
application/pdf |
en |
dc.language.iso |
en |
en |
dc.publisher |
Elsevier B.V. |
en |
dc.rights |
© 2018, Elsevier B.V. All rights reserved. This manuscript version is made available under the CC-BY-NC-ND 4.0 license. |
en |
dc.rights.uri |
https://creativecommons.org/licenses/by-nc-nd/4.0/ |
en |
dc.subject |
Metalorganic vapour phase epitaxy |
en |
dc.subject |
Nitrides |
en |
dc.subject |
GaN |
en |
dc.subject |
Semiconducting aluminium compounds |
en |
dc.title |
Control growth orientation of semipolar GaN layers grown on 3C-SiC/(001) Si |
en |
dc.type |
Article (peer-reviewed) |
en |
dc.internal.authorcontactother |
Van Duc Dinh, Tyndall Photonics, University College Cork, Cork, Ireland. +353-21-490-3000 Email: vanduc.dinh@tyndall.ie |
en |
dc.internal.availability |
Full text available |
en |
dc.check.info |
Access to this article is restricted until 24 months after publication by request of the publisher. |
en |
dc.check.date |
2020-08-23 |
|
dc.date.updated |
2018-09-14T08:37:48Z |
|
dc.description.version |
Accepted Version |
en |
dc.internal.rssid |
453694940 |
|
dc.contributor.funder |
Seventh Framework Programme
|
en |
dc.contributor.funder |
Science Foundation Ireland
|
en |
dc.contributor.funder |
Anvil Semiconductors, United Kingdom |
|
dc.description.status |
Peer reviewed |
en |
dc.identifier.journaltitle |
Journal of Crystal Growth |
en |
dc.internal.copyrightchecked |
Yes |
en |
dc.internal.licenseacceptance |
Yes |
en |
dc.internal.IRISemailaddress |
vanduc.dinh@tyndall.ie |
en |
dc.relation.project |
info:eu-repo/grantAgreement/EC/FP7::SP1::NMP/280587/EU/AlGaInN materials on semi-polar templates for yellow emission in solid state lighting applications/ALIGHT
|
en |