Control growth orientation of semipolar GaN layers grown on 3C-SiC/(001) Si

Show simple item record

dc.contributor.author Dinh, Duc V.
dc.contributor.author Parbrook, Peter J.
dc.date.accessioned 2018-09-24T08:49:27Z
dc.date.available 2018-09-24T08:49:27Z
dc.date.issued 2018-08-23
dc.identifier.citation Dinh, D. V. and Parbrook, P. J. (2018) 'Control growth orientation of semipolar GaN layers grown on 3C-SiC/(001) Si', Journal of Crystal Growth, 501, pp. 34-37. doi:10.1016/j.jcrysgro.2018.08.021 en
dc.identifier.volume 501 en
dc.identifier.startpage 34 en
dc.identifier.endpage 37 en
dc.identifier.issn 0022-0248
dc.identifier.uri http://hdl.handle.net/10468/6867
dc.identifier.doi 10.1016/j.jcrysgro.2018.08.021
dc.description.abstract Heteroepitaxial growth of GaN buffer layers on 3C-SiC/(001) Si substrates (4°-miscut towards [110]) by metalorganic vapour phase epitaxy has been investigated. High-temperature grown AlxGa1-xN/AlN interlayers were employed to control GaN surface orientations. Semipolar GaN layers with (101¯1), (202¯3) and (101¯2) surface orientations were achieved, as confirmed by X-ray diffraction. Due to the substrate miscut, the growth of (101¯1) layers was twinned along [11¯0]3C-SiC/Si and [1¯10]3C-SiC/Si while the growth of (202¯3) and (101¯2) layers was only along [110]3C-SiC/Si. The (101¯1) layers have rough surface morphology while the (202¯3) and (101¯2) layers have mirror-like smooth surface. For all samples with various surface orientations, different photoluminescence peak emission energies were observed at ∼3.45 eV, 3.78 eV and 3.27 eV at 10 K. These emissions are attributed to the near-band edge of hexagonal GaN, basal-plane stacking faults and partial dislocations, respectively. The dominant luminescence intensity of stacking faults indicates their high density in the GaN layers. en
dc.description.sponsorship Science Foundation Ireland (Professorship) en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher Elsevier B.V. en
dc.rights © 2018, Elsevier B.V. All rights reserved. This manuscript version is made available under the CC-BY-NC-ND 4.0 license. en
dc.rights.uri https://creativecommons.org/licenses/by-nc-nd/4.0/ en
dc.subject Metalorganic vapour phase epitaxy en
dc.subject Nitrides en
dc.subject GaN en
dc.subject Semiconducting aluminium compounds en
dc.title Control growth orientation of semipolar GaN layers grown on 3C-SiC/(001) Si en
dc.type Article (peer-reviewed) en
dc.internal.authorcontactother Van Duc Dinh, Tyndall Photonics, University College Cork, Cork, Ireland. +353-21-490-3000 Email: vanduc.dinh@tyndall.ie en
dc.internal.availability Full text available en
dc.check.info Access to this article is restricted until 24 months after publication by request of the publisher. en
dc.check.date 2020-08-23
dc.date.updated 2018-09-14T08:37:48Z
dc.description.version Accepted Version en
dc.internal.rssid 453694940
dc.contributor.funder Seventh Framework Programme en
dc.contributor.funder Science Foundation Ireland en
dc.contributor.funder Anvil Semiconductors, United Kingdom
dc.description.status Peer reviewed en
dc.identifier.journaltitle Journal of Crystal Growth en
dc.internal.copyrightchecked Yes en
dc.internal.licenseacceptance Yes en
dc.internal.IRISemailaddress vanduc.dinh@tyndall.ie en
dc.relation.project info:eu-repo/grantAgreement/EC/FP7::SP1::NMP/280587/EU/AlGaInN materials on semi-polar templates for yellow emission in solid state lighting applications/ALIGHT en


Files in this item

Files Size Format View

There are no files associated with this item.

This item appears in the following Collection(s)

Show simple item record

© 2018, Elsevier B.V. All rights reserved.  This manuscript version is made available under the CC-BY-NC-ND 4.0 license. Except where otherwise noted, this item's license is described as © 2018, Elsevier B.V. All rights reserved. This manuscript version is made available under the CC-BY-NC-ND 4.0 license.
This website uses cookies. By using this website, you consent to the use of cookies in accordance with the UCC Privacy and Cookies Statement. For more information about cookies and how you can disable them, visit our Privacy and Cookies statement