Wide spectral photoresponse of layered platinum diselenide-based photodiodes

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dc.contributor.author Yim, Chanyoung
dc.contributor.author McEvoy, Niall
dc.contributor.author Riazimehr, Sarah
dc.contributor.author Schneider, Daniel S.
dc.contributor.author Gity, Farzan
dc.contributor.author Monaghan, Scott
dc.contributor.author Hurley, Paul K.
dc.contributor.author Lemme, Max C.
dc.contributor.author Duesberg, Georg S.
dc.date.accessioned 2018-09-24T12:36:57Z
dc.date.available 2018-09-24T12:36:57Z
dc.date.issued 2018
dc.identifier.citation Yim, C., McEvoy, N., Riazimehr, S., Schneider, D. S., Gity, F., Monaghan, S., Hurley, P. K., Lemme, M. C. and Duesberg, G. S. (2018) 'Wide spectral photoresponse of layered platinum diselenide-based photodiodes', Nano Letters, 18(3), pp. 1794-1800. doi: 10.1021/acs.nanolett.7b05000 en
dc.identifier.volume 18
dc.identifier.issued 3
dc.identifier.startpage 1794
dc.identifier.endpage 1800
dc.identifier.issn 1530-6984
dc.identifier.uri http://hdl.handle.net/10468/6874
dc.identifier.doi 10.1021/acs.nanolett.7b05000
dc.description.abstract Platinum diselenide (PtSe2) is a group-10 transition metal dichalcogenide (TMD) that has unique electronic properties, in particular a semimetal-to-semiconductor transition when going from bulk to monolayer form. We report on vertical hybrid Schottky barrier diodes (SBDs) of two-dimensional (2D) PtSe2 thin films on crystalline n-type silicon. The diodes have been fabricated by transferring large-scale layered PtSe2 films, synthesized by thermally assisted conversion of predeposited Pt films at back-end-of-the-line CMOS compatible temperatures, onto SiO2/Si substrates. The diodes exhibit obvious rectifying behavior with a photoresponse under illumination. Spectral response analysis reveals a maximum responsivity of 490 mA/W at photon energies above the Si bandgap and relatively weak responsivity, in the range of 0.1–1.5 mA/W, at photon energies below the Si bandgap. In particular, the photoresponsivity of PtSe2 in infrared allows PtSe2 to be utilized as an absorber of infrared light with tunable sensitivity. The results of our study indicate that PtSe2 is a promising option for the development of infrared absorbers and detectors for optoelectronics applications with low-temperature processing conditions. en
dc.description.sponsorship European Regional Development Fund (HEA2D, EFRE0800149); Deutsche Forschungsgemeinschaft (DFG LE2440/1-2, GRK 1564) en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher American Chemical Society en
dc.relation.uri https://pubs.acs.org/doi/10.1021/acs.nanolett.7b05000
dc.rights © 2018, American Chemical Society. This is an open access article published under an ACS AuthorChoice License, which permits copying and redistribution of the article or any adaptations for non-commercial purposes en
dc.rights.uri https://pubs.acs.org/page/policy/authorchoice_termsofuse.html
dc.subject Two-dimensional transition metal dichalcogenide en
dc.subject Platinum diselenide en
dc.subject Schottky barrier diode en
dc.subject Photodetector en
dc.subject Spectral response en
dc.subject Ir photodiode en
dc.title Wide spectral photoresponse of layered platinum diselenide-based photodiodes en
dc.type Article (peer-reviewed) en
dc.internal.authorcontactother Paul Hurley, Tyndall Micronano Electronics, University College Cork, Cork, Ireland. +353-21-490-3000 Email: paul.hurley@tyndall.ie en
dc.internal.availability Full text available en
dc.description.version Published Version en
dc.contributor.funder Deutsche Forschungsgemeinschaft
dc.contributor.funder European Regional Development Fund
dc.contributor.funder Science Foundation Ireland
dc.contributor.funder European Commission
dc.contributor.funder European Research Council
dc.description.status Peer reviewed en
dc.identifier.journaltitle Nano Letters en
dc.internal.IRISemailaddress paul.hurley@tyndall.ie en
dc.relation.project info:eu-repo/grantAgreement/SFI/SFI Investigator Programme/15/IA/3131/IE/Investigating Emerging 2D Semiconductor Technology/
dc.relation.project info:eu-repo/grantAgreement/SFI/SFI Starting Investigator Research Grant (SIRG)/15/SIRG/3329/IE/Synthesis and Characterisation of 2D-Material Heterostacks/
dc.relation.project info:eu-repo/grantAgreement/EC/H2020::SGA-RIA/696656/EU/Graphene-based disruptive technologies/GrapheneCore1
dc.relation.project info:eu-repo/grantAgreement/EC/FP7::SP2::ERC/307311/EU/Integrating Graphene Devices/INTEGRADE


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