Electrostatic built-in fields in wurtzite III-N nanostructures: impact of growth plane on second-order piezoelectricity

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dc.contributor.author Patra, Saroj K.
dc.contributor.author Schulz, Stefan
dc.date.accessioned 2018-09-24T12:36:59Z
dc.date.available 2018-09-24T12:36:59Z
dc.date.issued 2017
dc.identifier.citation Patra, S. K. and Schulz, S. (2017) 'Electrostatic built-in fields in wurtzite III-N nanostructures: Impact of growth plane on second-order piezoelectricity', Physical Review B, 96(15), 155307 (15pp). doi: 10.1103/PhysRevB.96.155307 en
dc.identifier.volume 96
dc.identifier.issued 15
dc.identifier.startpage 1
dc.identifier.endpage 15
dc.identifier.issn 2469-9950
dc.identifier.uri http://hdl.handle.net/10468/6879
dc.identifier.doi 10.1103/PhysRevB.96.155307
dc.description.abstract In this work we present a detailed analysis of the second-order piezoelectric effect in wurtzite III-N heterostructures, such as quantum wells and quantum dots, grown on different substrate orientations. Our analysis is based on a continuum model using a here derived analytic expression for the second-order piezoelectric polarization vector field as a function of the incline angle theta to the wurtzite c axis. This expression allows for a straightforward implementation in existing quantum well and quantum dot codes. Our calculations on III-N quantum well systems reveal that especially for semipolar structures with high incline angle values (55 degrees <= theta <= 80 degrees and 105 degrees <= theta <= 120 degrees), second-order piezoelectricity noticeably contributes to the overall electric built-in field. For instance, in an InGaN/GaN multiple quantum well system with 22% In, the electric field increases by approximately 20% due to second-order piezoelectricity. Overall, when including second-order piezoelectric effects in the calculation of electric fields in GaN/AlN and InGaN/GaN quantum well systems an improved agreement between our theory and experimental literature data is observed. When studying quantum dots, at least for the here considered model geometry and growth planes, we observe that for GaN/AlN structures second-order effects are of secondary importance. The situation is different for non-c-plane In0.2Ga0.8N/GaN quantum dots. For example, inside a nonpolar In0.2Ga0.8N/GaN dot the built-in potential arising from second-order piezoelectricity is comparable in magnitude to the built-in potential originating from spontaneous and first-order piezoelectric polarization, but opposite in sign. This feature leads to a change in the built-in potential profile both in and around the In0.2Ga0.8N/GaN quantum dot structure, which in general is relevant for electronic and optical properties of these systems. en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher American Physical Society en
dc.relation.uri https://journals.aps.org/prb/abstract/10.1103/PhysRevB.96.155307
dc.rights ©2017, American Physical Society en
dc.subject Light-emitting-diodes en
dc.subject Molecular-beam epitaxy en
dc.subject Gan/aln quantum-wells en
dc.subject Optical-properties en
dc.subject Electronic-structure en
dc.subject Gallium-nitride en
dc.subject V nitrides en
dc.subject Dots en
dc.subject Polarization en
dc.subject Nonpolar en
dc.title Electrostatic built-in fields in wurtzite III-N nanostructures: impact of growth plane on second-order piezoelectricity en
dc.type Article (peer-reviewed) en
dc.internal.authorcontactother Saroj Kanta Patra, Studentships, University College Cork, Cork, Ireland. +353-21-490-3000 Email: sarojkanta.patra@tyndall.ie en
dc.internal.availability Full text available en
dc.description.version Published Version en
dc.contributor.funder Science Foundation Ireland
dc.description.status Peer reviewed en
dc.identifier.journaltitle Physical Review B en
dc.internal.IRISemailaddress sarojkanta.patra@tyndall.ie en
dc.identifier.articleid 155307
dc.relation.project info:eu-repo/grantAgreement/SFI/SFI Starting Investigator Research Grant (SIRG)/13/SIRG/2210/IE/Shaping the electronic and optical properties of non- and semi-polar nitride-based semiconductor nanostructures/

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