Influence of free radical surface activation on Si/SiC heterogeneous integration by direct wafer bonding

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dc.contributor.author Torchia, Pasqualino
dc.contributor.author Pampili, Pietro
dc.contributor.author O'Connell, John
dc.contributor.author O'Brien, Joe
dc.contributor.author White, Mary
dc.contributor.author Schmidt, Michael
dc.contributor.author Sheehan, Brendan
dc.contributor.author Waldron, Finbarr
dc.contributor.author Holmes, Justin D.
dc.contributor.author Monaghan, Scott
dc.contributor.author Duffy, Ray
dc.contributor.author Trajkovic, T.
dc.contributor.author Kilchytska, V.
dc.contributor.author Gammon, P. M.
dc.contributor.author Cherkaoui, Karim
dc.contributor.author Hurley, Paul K.
dc.contributor.author Gity, Farzan
dc.date.accessioned 2018-11-14T12:35:20Z
dc.date.available 2018-11-14T12:35:20Z
dc.date.issued 2017
dc.identifier.citation Torchia, P., Pampili, P., O'Connell, J., O'Brien, J., White, M., Schmidt, M., Sheehan, B., Waldron, F., Holmes, J. D., Monaghan, S., Duffy, R., Trajkovic, T., Kilchytska, V., Gammon, P., Cherkaoui, K., Hurley, P. K. and Gity, F.(2017) 'Influence of free radical surface activation on Si/SiC heterogeneous integration by direct wafer bonding', 2017 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (ULIS), Athens, Greece, 3-5 April. en
dc.identifier.uri http://hdl.handle.net/10468/7113
dc.description.abstract In this study, a surface activated bonding method using remote plasma is applied to realize the direct wafer bonding of Si and SiC. A comparison of different surface treatments is reported. Hydrophilic and hydrophobic wafers have been exposed to in-situ argon and nitrogen radicals generated by remote plasma for surface activation before bonding. A comparison of the bonding yield and surface condition has been conducted and analyzed as a function of the surface treatments. It has been shown that N2 plasma leads to the highest yield of > 97 %, strongest bond of > 360 N and interfacial layer (IL) thickness of ~1.5 nm. en
dc.description.uri http://eurosoi-ulis2017.inn.demokritos.gr/ en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.relation.ispartof 2017 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (ULIS)
dc.rights © 2017, the Authors. All rights reserved. en
dc.subject Direct wafer bonding en
dc.subject Free radical surface activation en
dc.subject Heterogenious integration en
dc.subject Si en
dc.subject SiC en
dc.title Influence of free radical surface activation on Si/SiC heterogeneous integration by direct wafer bonding en
dc.type Conference item en
dc.internal.authorcontactother Farzan Gity, Tyndall Photonics, University College Cork, Cork, Ireland. +353-21-490-3000 Email: farzan.gity@tyndall.ie en
dc.internal.availability Full text available en
dc.date.updated 2018-11-08T11:59:57Z
dc.description.version Accepted Version en
dc.internal.rssid 461092433
dc.contributor.funder Horizon 2020 en
dc.description.status Peer reviewed en
dc.internal.copyrightchecked Yes en
dc.internal.licenseacceptance Yes en
dc.internal.conferencelocation Athens, Greece en
dc.internal.IRISemailaddress Farzan.Gity@Tyndall.ie en
dc.relation.project info:eu-repo/grantAgreement/EC/H2020::RIA/687361/EU/Si on SiC for the Harsh Environment of Space/SaSHa en


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