Physics-based TCAD analysis of border and interface traps in Al2O3/InGaAs stacks using multifrequency CV-curves

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dc.contributor.author Caruso, Enrico
dc.contributor.author Lin, Jun
dc.contributor.author Burke, K. F.
dc.contributor.author Cherkaoui, Karim
dc.contributor.author Esseni, D.
dc.contributor.author Gity, Farzan
dc.contributor.author Monaghan, Scott
dc.contributor.author Palestri, P.
dc.contributor.author Hurley, Paul K.
dc.contributor.author Selmi, L.
dc.date.accessioned 2018-11-30T12:23:22Z
dc.date.available 2018-11-30T12:23:22Z
dc.date.issued 2018-06
dc.identifier.citation Caruso, E., Lin, J., Burke, K. F.; Cherkaoui, K., Esseni, D.; Gity, F., Monaghan, S., Palestri, P.; Hurley, P. K.; Selmi, L. (2018) ‘Physics-based TCAD analysis of border and interface traps in Al2O3/InGaAs stacks using multifrequency CV-curves’, 20th Workshop on Dielectrics in Microelectronics - WODIM 2018, Berlin, Germany, 10-14 June. en
dc.identifier.uri http://hdl.handle.net/10468/7160
dc.description.abstract In this paper, we analyze the multi-frequency C-V curves of In0.53Ga0.47As MOSCAPs by employing physics-based TCAD simulations including both border and interface traps. The calculations reproduce the experimental inversion and accumulation capacitance, and the general trend of the depletion capacitance. A study of the influence of the quantization model on the extraction of the trap distribution is also carried out. en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.rights © 2018, the Authors. All rights reserved. en
dc.subject TCAD en
dc.subject Depletion capacitance en
dc.subject Quantization model en
dc.title Physics-based TCAD analysis of border and interface traps in Al2O3/InGaAs stacks using multifrequency CV-curves en
dc.type Conference item en
dc.internal.authorcontactother Enrico Caruso, Tyndall National Institute, University College Cork, Cork, Ireland. T: +353-21-490-3000 E: enrico.caruso@tyndall.ie en
dc.internal.availability Full text available en
dc.description.version Submitted Version en
dc.internal.rssid 463811371
dc.description.status Peer reviewed en


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