4x25 Gbps polarization diversity silicon photonics receiver with transfer printed III-V photodiodes

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Date
2018-12-27
Authors
Muliuk, Grigorij
Van Gasse, Kasper
Van Kerrebrouck, Joris
Trindade, Antonio José
Corbett, Brian M.
Van Thourhout, Dries
Roelkens, Günther
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Institute of Electrical and Electronics Engineers (IEEE)
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Abstract
We demonstrate the transfer-printing-based integration of III-V substrate-illuminated p-i-n photodetectors onto a 4-wavelength-channel silicon photonics polarization diversity receiver circuit. 4x25 Gbps operation is demonstrated for 2.5 nm wavelength channel spacing in the C-band. Transfer printing is an enabling technology for massively parallel heterogeneous III-V-on-Si integration.
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Keywords
Receivers , Printing , Photonics , Silicon , Photodiodes , Optical waveguides , III-V semiconductor materials , Heterogeneous integration , Transfer printing , Wavelength division multiplexing receiver
Citation
Muliuk, G., Van Gasse, K., Van Kerrebrouck, J., Trindade, A. J., Corbett, B., Van Thourhout, D. and Roelkens, G. (2018) '4x25 Gbps polarization diversity silicon photonics receiver with transfer printed III-V photodiodes', IEEE Photonics Technology Letters. doi:10.1109/LPT.2018.2889901
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© 2018, IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.