Monolayer doping and other strategies in high surface-to-volume ratio silicon devices

Show simple item record Duffy, Ray Kennedy, Noel Mirabelli, Gioele Galluccio, Emmanuele Hurley, Paul K. Holmes, Justin D. Long, Brenda 2019-01-17T14:48:54Z 2019-01-17T14:48:54Z 2018-03
dc.identifier.citation Duffy, R., Kennedy, N., Mirabelli, G., Galluccio, E., Hurley, P. K., Holmes, J. D. and Long, B. (2018) 'Monolayer doping and other strategies in high surface-to-volume ratio silicon devices', 18th International Workshop on Junction Technology (IWJT), Shanghai, China. 8-9 March. doi: 10.1109/IWJT.2018.8330294 en
dc.identifier.startpage 1 en
dc.identifier.endpage 6 en
dc.identifier.isbn 978-1-5386-4513-0
dc.identifier.isbn 978-1-5386-4511-6
dc.identifier.doi 10.1109/IWJT.2018.8330294
dc.description.abstract To maintain electron device scaling, in recent years the semiconductor industry has been forced to move from planar to non-planar thin-body electron device architectures. This alone has created the need to develop a radically new, non-destructive, conformal method for doping. Doping alters the electrical properties of a semiconductor, related to the access resistance. Monolayer doping (MLD) is a promising surface-based technique, whereby organic molecules are covalently bound to the semiconductor surface at relatively low processing temperatures (room temperature - 160 °C). A thermal treatment is then applied which both frees the dopant atoms from the organic molecules, and provides the energy for diffusion into the semiconductor substrate and subsequent activation. Very promising results have been achieved, but mostly on planar unpatterned substrates. There is now a need to assess the suitability of MLD for thin-body semiconductor features with high surface-to-volume ratios and densely packed structures. It is the aim of this review paper to consider MLD from this perspective. en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher Institute of Electrical and Electronics Engineers (IEEE) en
dc.relation.ispartof IEEE 18th International Workshop on Junction Technology (IWJT)
dc.rights © 2018 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. en
dc.subject Semiconductor en
dc.subject Electron device scaling en
dc.subject Monolayer doping (MLD) en
dc.title Monolayer doping and other strategies in high surface-to-volume ratio silicon devices en
dc.type Conference item en
dc.internal.authorcontactother Justin D. Holmes, Chemistry, University College Cork, Cork, Ireland. +353-21-490-3000 Email: en
dc.internal.availability Full text available en 2019-01-10T12:27:21Z
dc.description.version Accepted Version en
dc.internal.rssid 468999983
dc.contributor.funder Enterprise Ireland en
dc.contributor.funder European Regional Development Fund en
dc.description.status Peer reviewed en
dc.identifier.journaltitle 18th International Workshop on Junction Technology (IWJT) en
dc.internal.copyrightchecked No !!CORA!! en
dc.internal.licenseacceptance Yes en
dc.internal.conferencelocation Shanghai, China en
dc.internal.IRISemailaddress en
dc.internal.IRISemailaddress en

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