Low threshold lasing in InP/GaInP quantum dot microdisks

Lebedev, D. V.; Vlasov, A. S.; Kulagina, M. M.; Troshkov, S. I.; Guseva, Y. A.; Pelucchi, Emanuele; Gocalińska, Agnieszka M.; Juska, Gediminas; Romanova, A. Y.; Buriak, P. A.; Smirnov, V. I.; Shelaev, A. V.; Bykov, V. A.; Mintairov, A. M.

doi:10.1134/S1063782618140166

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dc.contributor.author	Lebedev, D. V.
dc.contributor.author	Vlasov, A. S.
dc.contributor.author	Kulagina, M. M.
dc.contributor.author	Troshkov, S. I.
dc.contributor.author	Guseva, Y. A.
dc.contributor.author	Pelucchi, Emanuele
dc.contributor.author	Gocalińska, Agnieszka M.
dc.contributor.author	Juska, Gediminas
dc.contributor.author	Romanova, A. Y.
dc.contributor.author	Buriak, P. A.
dc.contributor.author	Smirnov, V. I.
dc.contributor.author	Shelaev, A. V.
dc.contributor.author	Bykov, V. A.
dc.contributor.author	Mintairov, A. M.
dc.date.accessioned	2019-02-05T11:21:41Z
dc.date.available	2019-02-05T11:21:41Z
dc.date.issued	2018-12-27
dc.identifier.citation	Lebedev, D. V., Vlasov, A. S., Kulagina, M. M., Troshkov, S. I., Guseva, Y. A., Pelucchi, E., Gocalinska, A., Juska, G., Romanova, A. Y., Buriak, P. A., Smirnov, V. I., Shelaev, A. V., Bykov, V. A. and Mintairov, A. M. (2018) 'Low threshold lasing in InP/GaInP quantum dot microdisks', Semiconductors, 52(14), pp. 1894-1897. doi:10.1134/S1063782618140166	en
dc.identifier.volume	52	en
dc.identifier.issued	14	en
dc.identifier.startpage	1894	en
dc.identifier.endpage	1897	en
dc.identifier.issn	1063-7826
dc.identifier.issn	1090-6479
dc.identifier.uri	http://hdl.handle.net/10468/7435
dc.identifier.doi	10.1134/S1063782618140166
dc.description.abstract	We report a realization of room temperature lasing threshold of 1 μW in GaInP microdisk containing a few self-aggregated InP/GaInP quantum dots (QDs) grown by metal-organic vapor phase epitaxy. InP/GaInP QD microdisk cavities emitting in the spectral range of 700–800 nm and having the size of ~2 μm, free spectral range of ~35 nm and quality factors Q ~ 4000 were formed by wet chemical etching. Low dot density (~2 μm–2) and large dot size (~150 nm), suggesting a single dot lasing and maximum overlap of QD and cavity mode, were achieved using deposition of 3 ML of InP layer at 700°C.	en
dc.description.sponsorship	Russian Foundation for Basic Research (Project Number 18-32-00321); Science Foundation Ireland (Grant Number 15/IA/2864); Ministry of the Education and Science of the Russian Federation (Contract Number 14.Z50.31.0021)	en
dc.format.mimetype	application/pdf	en
dc.language.iso	en	en
dc.publisher	Pleiades Publishing, Ltd.	en
dc.rights	© 2018, Pleiades Publishing, Ltd. This a preprint of the Work accepted for publication in Semiconductors, available at: https://doi.org/10.1134/S1063782618140166	en
dc.subject	Whispering gallery modes	en
dc.subject	Laser	en
dc.title	Low threshold lasing in InP/GaInP quantum dot microdisks	en
dc.type	Article (peer-reviewed)	en
dc.internal.authorcontactother	Emanuele Pelucchi, Tyndall Photonics, University College Cork, Cork, Ireland. +353-21-490-3000 Email: emanuele.pelucchi@tyndall.ie	en
dc.internal.availability	Full text available	en
dc.date.updated	2019-02-05T11:03:00Z
dc.description.version	Accepted Version	en
dc.internal.rssid	468999858
dc.internal.wokid	WOS:000454520200028
dc.contributor.funder	Russian Foundation for Basic Research	en
dc.contributor.funder	Science Foundation Ireland	en
dc.contributor.funder	Ministry of Education and Science of the Russian Federation	en
dc.description.status	Peer reviewed	en
dc.identifier.journaltitle	Semiconductors	en
dc.internal.copyrightchecked	Yes	en
dc.internal.licenseacceptance	Yes	en
dc.internal.IRISemailaddress	emanuele.pelucchi@tyndall.ie	en
dc.relation.project	info:eu-repo/grantAgreement/SFI/SFI Research Centres/12/RC/2276/IE/I-PIC Irish Photonic Integration Research Centre/	en