Low threshold lasing in InP/GaInP quantum dot microdisks

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dc.contributor.author Lebedev, D. V.
dc.contributor.author Vlasov, A. S.
dc.contributor.author Kulagina, M. M.
dc.contributor.author Troshkov, S. I.
dc.contributor.author Guseva, Y. A.
dc.contributor.author Pelucchi, Emanuele
dc.contributor.author Gocalińska, Agnieszka M.
dc.contributor.author Juska, Gediminas
dc.contributor.author Romanova, A. Y.
dc.contributor.author Buriak, P. A.
dc.contributor.author Smirnov, V. I.
dc.contributor.author Shelaev, A. V.
dc.contributor.author Bykov, V. A.
dc.contributor.author Mintairov, A. M.
dc.date.accessioned 2019-02-05T11:21:41Z
dc.date.available 2019-02-05T11:21:41Z
dc.date.issued 2018-12-27
dc.identifier.citation Lebedev, D. V., Vlasov, A. S., Kulagina, M. M., Troshkov, S. I., Guseva, Y. A., Pelucchi, E., Gocalinska, A., Juska, G., Romanova, A. Y., Buriak, P. A., Smirnov, V. I., Shelaev, A. V., Bykov, V. A. and Mintairov, A. M. (2018) 'Low threshold lasing in InP/GaInP quantum dot microdisks', Semiconductors, 52(14), pp. 1894-1897. doi:10.1134/S1063782618140166 en
dc.identifier.volume 52 en
dc.identifier.issued 14 en
dc.identifier.startpage 1894 en
dc.identifier.endpage 1897 en
dc.identifier.issn 1063-7826
dc.identifier.issn 1090-6479
dc.identifier.uri http://hdl.handle.net/10468/7435
dc.identifier.doi 10.1134/S1063782618140166
dc.description.abstract We report a realization of room temperature lasing threshold of 1 μW in GaInP microdisk containing a few self-aggregated InP/GaInP quantum dots (QDs) grown by metal-organic vapor phase epitaxy. InP/GaInP QD microdisk cavities emitting in the spectral range of 700–800 nm and having the size of ~2 μm, free spectral range of ~35 nm and quality factors Q ~ 4000 were formed by wet chemical etching. Low dot density (~2 μm–2) and large dot size (~150 nm), suggesting a single dot lasing and maximum overlap of QD and cavity mode, were achieved using deposition of 3 ML of InP layer at 700°C. en
dc.description.sponsorship Russian Foundation for Basic Research (Project Number 18-32-00321); Science Foundation Ireland (Grant Number 15/IA/2864); Ministry of the Education and Science of the Russian Federation (Contract Number 14.Z50.31.0021) en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher Pleiades Publishing, Ltd. en
dc.rights © 2018, Pleiades Publishing, Ltd. This a preprint of the Work accepted for publication in Semiconductors, available at: https://doi.org/10.1134/S1063782618140166 en
dc.subject Whispering gallery modes en
dc.subject Laser en
dc.title Low threshold lasing in InP/GaInP quantum dot microdisks en
dc.type Article (peer-reviewed) en
dc.internal.authorcontactother Emanuele Pelucchi, Tyndall Photonics, University College Cork, Cork, Ireland. +353-21-490-3000 Email: emanuele.pelucchi@tyndall.ie en
dc.internal.availability Full text available en
dc.date.updated 2019-02-05T11:03:00Z
dc.description.version Accepted Version en
dc.internal.rssid 468999858
dc.internal.wokid WOS:000454520200028
dc.contributor.funder Russian Foundation for Basic Research en
dc.contributor.funder Science Foundation Ireland en
dc.contributor.funder Ministry of Education and Science of the Russian Federation en
dc.description.status Peer reviewed en
dc.identifier.journaltitle Semiconductors en
dc.internal.copyrightchecked Yes en
dc.internal.licenseacceptance Yes en
dc.internal.IRISemailaddress emanuele.pelucchi@tyndall.ie en
dc.relation.project info:eu-repo/grantAgreement/SFI/SFI Research Centres/12/RC/2276/IE/I-PIC Irish Photonic Integration Research Centre/ en

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