Design of 3.3 and 4.2 μm mid-infrared metamorphic quantum well light-emitting diodes
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Broderick, Christopher A.
O'Reilly, Eoin P.
Institute of Electrical and Electronics Engineers (IEEE)
The use of Al z In 1-z As metamorphic buffer layers to facilitate the growth of lattice-mismatched InN y (As 1-x Sb x ) 1-y quantum wells on GaAs or InAs substrates has recently been demonstrated to constitute an attractive approach to developing light-emitting devices at application-rich mid-infrared wavelengths. However, little information is available regarding the fundamental properties of this newly established platform. We present a theoretical investigation and optimisation of the properties and performance of InN y (As 1-x Sb x ) 1-y /Al z In 1-z As structures designed to emit at 3.3 and 4.2 μm. We quantify the design space available to these structures in terms of the ability to engineer and optimise the optoelectronic properties, and quantify the potential of metamorphic InN y (As 1-x Sb x ) 1-y structures for the development of mid-infrared light emitters, providing guidelines for the design of optimised light-emitting diodes.
Aluminium compounds , Buffer layers , III-V semiconductors , Indium compounds , Light emitting diodes , Semiconductor growth , Semiconductor quantum wells , Metamorphic structures , Mid-infrared metamorphic quantum well , Lattice-mismatched quantum wells , InAs substrates , Structure properties , Optoelectronic properties , Metamorphic buffer layers , Wavelength 3.3 mum , Wavelength 4.2 mum , InAs , InNy(As1-xSbx)1-y-AlzIn1-zAs , Metals , Strain , Stimulated emission , Radiative recombination , Gallium arsenide , Optimization
Arkani, R., Broderick, C. A. and O'Reilly, E. P. (2018) 'Design of 3.3 and 4.2 μm mid-infrared metamorphic quantum well light-emitting diodes', 2018 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD), Hong Kong, China, 5-9 November, pp. 119-120. doi:10.1109/NUSOD.2018.8570223
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