Atomic layer deposited electron transport layers in efficient organometallic halide perovskite devices
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Accepted version
Date
2018-07-03
Authors
McCarthy, Melissa M.
Walter, Arnaud
Moon, Soo-Jin
Noel, Nakita K.
O'Brien, Shane
Pemble, Martyn E.
Nicolay, Sylvain
Wenger, Bernard
Snaith, Henry J.
Povey, Ian M.
Journal Title
Journal ISSN
Volume Title
Publisher
Cambridge University Press (CUP)
Published Version
Abstract
Amorphous TiO2 and SnO2 electron transport layers (ETLs) were deposited by low-temperature atomic layer deposition (ALD). Surface morphology and x-ray photoelectron spectroscopy (XPS) indicate uniform and pinhole free coverage of these ALD hole blocking layers. Both mesoporous and planar perovskite solar cells were fabricated based on these thin films with aperture areas of 1.04 cm2 for TiO2 and 0.09 cm2 and 0.70 cm2 for SnO2. The resulting cell performance of 18.3 % power conversion efficiency (PCE) using planar SnO2 on 0.09 cm2 and 15.3 % PCE using mesoporous TiO2 on 1.04 cm2 active areas are discussed in conjunction with the significance of growth parameters and ETL composition.
Description
Keywords
Perovskites , Atomic layer deposition , Photovoltaic , Thin film
Citation
McCarthy, M. M., Walter, A., Moon, S.-J., Noel, N. K., O’Brien, S., Pemble, M. E., Nicolay, S., Wenger, B., Snaith, H. J. and Povey, I. M. (2018) 'Atomic Layer Deposited Electron Transport Layers in Efficient Organometallic Halide Perovskite Devices', MRS Advances, 3(51), pp. 3075-3084. doi: 10.1557/adv.2018.515
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© Materials Research Society 2018. This article has been published in a revised form in MRS Advances, http://dx.doi.org/10.1557/adv.2018.515 This version is free to view and download for private research and study only. Not for re-distribution, re-sale or use in derivative works.