Selective electroless nickel deposition on copper as a final barrier/bonding layer material for microelectronics applications
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Accepted version
Date
2001-12-11
Authors
Rohan, James F.
O'Riordan, Gerald
Boardman, Jane
Journal Title
Journal ISSN
Volume Title
Publisher
Elsevier
Published Version
Abstract
A low cost, selective electroless metallisation of integrated circuit (IC) copper bond pads with nickel and gold is demonstrated. This metallurgy can function as a barrier layer/bondable material when deposited as a thin layer or as the chip bump for flip chip applications when deposited to greater heights. Four alternative activation steps for selective electroless nickel deposition on bond pad copper are demonstrated. Selective low cost deposition has been achieved with a proprietary electroless plating bath developed at NMRC and three commercial baths on both sputtered copper substrates and electrolessly deposited copper on titanium nitride barrier layer material.
Description
Keywords
Electroless deposition , Copper bond pads , Barrier layer , Flip chip
Citation
Rohan, J. F., O’Riordan, G. and Boardman, J. (2002) 'Selective electroless nickel deposition on copper as a final barrier/bonding layer material for microelectronics applications', Applied Surface Science, 185(3), pp. 289-297. doi: 10.1016/S0169-4332(01)00982-5