Dense GaN nanocolumn arrays by hybrid top-down-regrow approach using nanosphere lithography

Show simple item record

dc.contributor.author Zubialevich, Vitaly Z.
dc.contributor.author Pampili, Pietro
dc.contributor.author McLaren, M.
dc.contributor.author Arredondo-Arechavala, Miryam
dc.contributor.author Sabui, G.
dc.contributor.author Shen, Z. J.
dc.contributor.author Parbrook, Peter J.
dc.date.accessioned 2019-03-19T10:11:41Z
dc.date.available 2019-03-19T10:11:41Z
dc.date.issued 2018-07
dc.identifier.citation Zubialevich, V. Z., Pampili, P., McLaren, M., Arredondo-Arechavala, M., Sabui, G., Shen, Z. J. and Parbrook, P. J. (2018) 'Dense GaN nanocolumn arrays by hybrid top-down-regrow approach using nanosphere lithography', 2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO), Cork, Ireland, 23-26 July. doi:10.1109/NANO.2018.8626265 en
dc.identifier.startpage 1 en
dc.identifier.endpage 3 en
dc.identifier.isbn 978-1-5386-5336-4
dc.identifier.isbn 978-1-5386-5337-1
dc.identifier.issn 1944-9380
dc.identifier.issn 1944-9399
dc.identifier.uri http://hdl.handle.net/10468/7638
dc.identifier.doi 10.1109/NANO.2018.8626265
dc.description.abstract A comprehensive description of a procedure to form dense locally ordered 2D arrays of vertically aligned hexagonal in section GaN nanocolumns (NCs) without height deviations will be presented. Particular focus will be given for the preparation of silica nanosphere hard masks, dry etching to form GaN NCs, wet etching to modify NC shape, thermal annealing and regrowth to recover non-polar m-plane facets, improve NC crystal quality and array fill factor. en
dc.description.sponsorship Department for Employment and Learning, Northern Ireland (Grant no. USI 058); National Science Foundation (Grant no. EECS-1407540); Science Foundation Ireland (Engineering Professorship Scheme SFI/07/EN/ E001A) en
dc.description.uri http://ieeenano18.org/ en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher Institute of Electrical and Electronics Engineers (IEEE) en
dc.relation.ispartof 2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO)
dc.relation.uri https://ieeexplore.ieee.org/document/8626265
dc.rights © 2018, IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. en
dc.subject Annealing en
dc.subject Gallium compounds en
dc.subject III-V semiconductors en
dc.subject Masks en
dc.subject Nanolithography en
dc.subject Nanostructured materials en
dc.subject Semiconductor growth en
dc.subject Wide band gap semiconductors en
dc.subject Dense nanocolumn arrays en
dc.subject Hybrid top-down-regrow approach en
dc.subject Dense locally ordered 2D arrays en
dc.subject Thermal annealing en
dc.subject Nonpolar m-plane facets en
dc.subject NC crystal quality en
dc.subject Array fill factor en
dc.subject Wet etching en
dc.subject Dry etching en
dc.subject Silica nanosphere hard masks en
dc.subject Height deviations en
dc.subject Nanocolumns en
dc.subject Nanosphere lithography en
dc.subject GaN en
dc.subject SiO2 en
dc.subject Gallium nitride en
dc.subject Surface treatment en
dc.subject MOCVD en
dc.subject Shape en
dc.subject Epitaxial growth en
dc.subject Optics en
dc.title Dense GaN nanocolumn arrays by hybrid top-down-regrow approach using nanosphere lithography en
dc.type Conference item en
dc.internal.authorcontactother Vitaly Zubialevich, Tyndall Photonics, University College Cork, Cork, Ireland. +353-21-490-3000 Email: vitaly.zubialevich@tyndall.ie en
dc.internal.availability Full text available en
dc.date.updated 2019-03-19T10:00:00Z
dc.description.version Accepted Version en
dc.internal.rssid 478089152
dc.contributor.funder Department for Employment and Learning, Northern Ireland en
dc.contributor.funder Science Foundation Ireland en
dc.contributor.funder National Science Foundation en
dc.description.status Peer reviewed en
dc.internal.copyrightchecked Yes en
dc.internal.licenseacceptance Yes en
dc.internal.conferencelocation Cork, Ireland en
dc.internal.IRISemailaddress vitaly.zubialevich@tyndall.ie en
dc.relation.project info:eu-repo/grantAgreement/SFI/SFI US Ireland R&D Partnership/13/US/I2860/IE/US-Ireland Collaborative Research on Nano-GaN Power Electronic Devices/ en


Files in this item

This item appears in the following Collection(s)

Show simple item record

This website uses cookies. By using this website, you consent to the use of cookies in accordance with the UCC Privacy and Cookies Statement. For more information about cookies and how you can disable them, visit our Privacy and Cookies statement