A regrowth-free, facetless multiple quantum wells AlInGaAs semiconductor laser suitable for photonic integration

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IPRSN-2018-ITu4B.3.pdf(532.63 KB)
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Date
2018-07
Authors
Caro, Ludovic
Yang, Hua
Peters, Frank H.
Dernaika, Mohamad
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Publisher
Optical Society of America
Published Version
10.1364/IPRSN.2018.ITu4B.3
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Abstract
A facetless, semiconductor laser suitable for photonic integration is presented in this paper. The laser fabrication process employs contact lithography and regrowth-free process. Moreover, the laser cavity is monolithically integrated with a semiconductor optical amplifier.
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Keywords
Laser materials processing , Multiple quantum wells , Semiconductor lasers , Semiconductor optical amplifiers , Single mode lasers , Tunable lasers
Citation
Dernaika, M., Caro, L., Yang, H. and Peters, F. H. (2018) 'A regrowth-free, facetless multiple quantum wells AlInGaAs semiconductor laser suitable for photonic integration', Proceedings of Advanced Photonics Congress 2018, Zurich, Switzerland, 2-5 July, ITu4B.3 (2pp). doi:10.1364/IPRSN.2018.ITu4B.3
Link to publisher’s version
http://www.osapublishing.org/abstract.cfm?URI=IPRSN-2018-ITu4B.3
URI
https://hdl.handle.net/10468/7671
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Tyndall National Institute - Conference Items
Electrical and Electronic Engineering - Conference Items
Physics - Conference Items
Copyright
© 2018, the Authors. Published by the Optical Society of America. One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this paper for a fee or for commercial purposes, or modifications of the content of this paper are prohibited.