High efficiency Si integrated micro-transformers using stacked copper windings for power conversion applications
Wang, Ningning; Kulkarni, Santosh; Jamieson, Brice; Rohan, James F.; Casey, Declan P.; Roy, Saibal; Ó Mathúna, S. Cian
Date:
2012-01
Copyright:
© 2012, IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.
Citation:
Wang, N., Kulkarni, S., Jamieson, B., Rohan, J., Casey, D., Roy, S. and Ó Mathúna, C. (2012) 'High efficiency Si integrated micro-transformers using stacked copper windings for power conversion applications', 2012 Twenty-Seventh Annual IEEE Applied Power Electronics Conference and Exposition (APEC), Orlando, Florida, USA, 5-9 February, pp. 411-416. doi:10.1109/APEC.2012.6165852
Abstract:
This paper details the design, fabrication, and characterization of silicon integrated micro-transformers. Two types of race-track shaped micro-transformers, single copper winding or single layer metal (SLM) and double copper winding or double layer metal (DLM) were designed and fabricated using standard CMOS processing. The DLM devices have higher inductance density than SLM devices realized within similar footprint area. The design study showed that the efficiency of micro-transformers increased from 37% for SLM designs to over 75% for DLM transformers at 20 MHz.
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