A study of the temperature dependence of the local ferroelectric properties of c-axis oriented Bi6Ti3Fe2O18 Aurivillius phase thin films: Illustrating the potential of a novel lead-free perovskite material for high density memory applications

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dc.contributor.author Faraz, Ahmad
dc.contributor.author Deepak, Nitin
dc.contributor.author Schmidt, Michael
dc.contributor.author Pemble, Martyn E.
dc.contributor.author Keeney, Lynette
dc.date.accessioned 2019-04-03T11:34:25Z
dc.date.available 2019-04-03T11:34:25Z
dc.date.issued 2015-08-07
dc.identifier.citation Faraz, A., Deepak, N., Schmidt, M., Pemble, M. E. and Keeney, L. (2015) 'A study of the temperature dependence of the local ferroelectric properties of c-axis oriented Bi6Ti3Fe2O18 Aurivillius phase thin films: Illustrating the potential of a novel lead-free perovskite material for high density memory applications', AIP Advances, 5(8), 087123 (14 pp). doi: 10.1063/1.4928495 en
dc.identifier.volume 5 en
dc.identifier.issued 8 en
dc.identifier.startpage 087123-1 en
dc.identifier.endpage 087123-14 en
dc.identifier.uri http://hdl.handle.net/10468/7699
dc.identifier.doi 10.1063/1.4928495 en
dc.description.abstract The ability to control the growth, texture and orientation of self-nanostructured lead-free Aurivillius phase thin films can in principle, greatly improve their ferroelectric properties, since in these materials the polarization direction is dependent on crystallite orientation. Here, we report the growth of c-plane oriented Bi6Ti3Fe2O18 (B6TFO) functional oxide Aurivillius phase thin films on c-plane sapphire substrates by liquid injection chemical vapour deposition (LI-CVD). Microstructural analysis reveals that B6TFO thin films annealed at 850°C are highly crystalline, well textured (Lotgering factor of 0.962) and single phase. Typical Aurivillius plate-like morphology with an average film thickness of 110nm and roughness 24nm was observed. The potential of B6TFO for use as a material in lead-free piezoelectric and ferroelectric data storage applications was explored by investigating local electromechanical (piezoelectric) and ferroelectric properties at the nano-scale. Vertical and lateral piezoresponse force microscopy (PFM) reveals stronger in-plane polarization due to the controlled growth of the a-axis oriented grains lying in the plane of the B6TFO films. Switching spectroscopy PFM (SS-PFM) hysteresis loops obtained at higher temperatures (up to 200°C) and at room temperature reveal a clear ferroelectric signature with only minor changes in piezoresponse observed with increasing temperature. Ferroelectric domain patterns were written at 200°C using PFM lithography. Hysteresis loops generated inside the poled regions at room and higher temperatures show a significant increase in piezoresponse due to alignment of the c-axis polarization components under the external electric field. No observable change in written domain patterns was observed after 20hrs of PFM scanning at 200°C, confirming that B6TFO retains polarization over this finite period of time. These studies demonstrate the potential of B6TFO thin films for use in piezoelectric applications at elevated temperatures and for use in non-volatile ferroelectric memory applications. en
dc.description.sponsorship Higher Education Authority (HEA PRTLI 3, HEA PRTLI4 Project INSPIRE) en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher AIP Publishing en
dc.relation.uri http://scitation.aip.org/content/aip/journal/adva/5/8/10.1063/1.4928495
dc.rights © 2015 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License. en
dc.rights.uri https://creativecommons.org/licenses/by/3.0/ en
dc.subject Polarization en
dc.subject Ferroelectric thin films en
dc.subject Atomic force microscopy en
dc.subject Ferroelectric materials en
dc.subject Ferroelectric switching en
dc.title A study of the temperature dependence of the local ferroelectric properties of c-axis oriented Bi6Ti3Fe2O18 Aurivillius phase thin films: Illustrating the potential of a novel lead-free perovskite material for high density memory applications en
dc.type Article (peer-reviewed) en
dc.internal.authorcontactother Lynette Keeney, Tyndall Photonics, University College Cork, Cork, Ireland. +353-21-490-3000 Email: lynette.keeney@tyndall.ie en
dc.internal.availability Full text available en
dc.date.updated 2019-03-26T09:12:32Z
dc.description.version Published Version en
dc.internal.rssid 313387844
dc.contributor.funder Science Foundation Ireland en
dc.contributor.funder Higher Education Authority en
dc.contributor.funder Seventh Framework Programme en
dc.description.status Peer reviewed en
dc.identifier.journaltitle Journal of Applied Physics en
dc.internal.copyrightchecked No
dc.internal.licenseacceptance Yes en
dc.internal.IRISemailaddress lynette.keeney@tyndall.ie en
dc.identifier.articleid 087123 en
dc.relation.project info:eu-repo/grantAgreement/SFI/SFI Strategic Research Cluster/07/SRC/I1172/IE/SRC FORME: Functional Oxides and Related Materials for Electronics/ en
dc.relation.project info:eu-repo/grantAgreement/EC/FP7::SP3::PEOPLE/290158/EU/NANOELECTROMECHANICAL MOTION IN FUNCTIONAL MATERIALS/NANOMOTION en
dc.relation.project info:eu-repo/grantAgreement/SFI/SFI Technology and Innovation Development Award (TIDA)/13/TIDA/I2728/IE/New memory cell test structure devices based on single phase multiferroics/ en
dc.identifier.eissn 2158-3226


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© 2015 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License. Except where otherwise noted, this item's license is described as © 2015 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License.
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