Atomic layer deposition of Cu with a carbene-stabilized Cu (i) silylamide

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dc.contributor.author Hagen, Dirk J.
dc.contributor.author Povey, Ian M.
dc.contributor.author Rushworth, Simon
dc.contributor.author Wrench, Jacqueline S.
dc.contributor.author Keeney, Lynette
dc.contributor.author Schmidt, Michael
dc.contributor.author Petkov, Nikolay
dc.contributor.author Barry, Seán T.
dc.contributor.author Coyle, Jason P.
dc.contributor.author Pemble, Martyn E.
dc.date.accessioned 2019-04-03T12:06:58Z
dc.date.available 2019-04-03T12:06:58Z
dc.date.issued 2014-09-14
dc.identifier.citation Hagen, D. J., Povey, I. M., Rushworth, S., Wrench, J. S., Keeney, L., Schmidt, M., Petkov, N., Barry, S. T., Coyle, J. P. and Pemble, M. E. (2014) 'Atomic layer deposition of Cu with a carbene-stabilized Cu(i) silylamide', Journal of Materials Chemistry C, 2(43), pp. 9205-9214. doi: 10.1039/C4TC01418A en
dc.identifier.volume 2 en
dc.identifier.issued 43 en
dc.identifier.startpage 9205 en
dc.identifier.endpage 9214 en
dc.identifier.issn 2050-7526
dc.identifier.uri http://hdl.handle.net/10468/7700
dc.identifier.doi 10.1039/C4TC01418A en
dc.description.abstract The metal–organic Cu(I) complex 1,3-diisopropyl-imidazolin-2-ylidene copper hexamethyl disilazide has been tested as a novel oxygen-free precursor for atomic layer deposition of Cu with molecular hydrogen. Being a strong Lewis base, the carbene stabilizes the metal centre to form a monomeric compound that can be vaporised and transported without visible degradation. A significant substrate dependence of the growth process not only with respect to the film material but also to the structure of the films was observed. On Pd surfaces continuous films are grown and no phase boundary can be observed between the Cu film and the Pd, while island growth is observed on Ru substrates, which as a consequence requires thicker films in order to achieve a fully coalesced layer. Island growth is also observed for ultra-thin (<10 nm) Pd layers on Si substrates. Possible explanations for the different growth modes observed are discussed. en
dc.description.sponsorship Irish Research Council for Science, Engineering and Technology (Studentship); Intel Corporation (Intel Ireland) en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher Royal Society of Chemistry (RSC) en
dc.relation.uri https://pubs.rsc.org/en/Content/ArticleLanding/2014/TC/C4TC01418A
dc.rights © The Royal Society of Chemistry 2014 en
dc.subject Atomic layer deposition en
dc.subject Metallic films en
dc.subject Deposition ALD en
dc.title Atomic layer deposition of Cu with a carbene-stabilized Cu (i) silylamide en
dc.type Article (peer-reviewed) en
dc.internal.authorcontactother Lynette Keeney, Tyndall Photonics, University College Cork, Cork, Ireland. +353-21-490-3000 Email: lynette.keeney@tyndall.ie en
dc.internal.availability Full text available en
dc.date.updated 2019-03-26T09:17:56Z
dc.description.version Accepted Version en
dc.internal.rssid 275560063
dc.contributor.funder Science Foundation Ireland en
dc.contributor.funder Irish Research Council for Science, Engineering and Technology en
dc.contributor.funder Intel Corporation en
dc.description.status Peer reviewed en
dc.identifier.journaltitle Journal of Materials Chemistry C en
dc.internal.copyrightchecked No
dc.internal.licenseacceptance Yes en
dc.internal.IRISemailaddress lynette.keeney@tyndall.ie en
dc.relation.project info:eu-repo/grantAgreement/SFI/SFI Strategic Research Cluster/07/SRC/I1172/IE/SRC FORME: Functional Oxides and Related Materials for Electronics/ en
dc.identifier.eissn 2050-7534


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