Bismuth self-limiting growth of ultrathin BiFeO3 films

Show simple item record Deepak, Nitin Carolan, Patrick B. Keeney, Lynette Zhang, Panfeng F. Pemble, Martyn E. Whatmore, Roger W. 2019-04-08T11:00:47Z 2019-04-08T11:00:47Z 2015-09-11
dc.identifier.citation Deepak, N., Carolan, P., Keeney, L., Zhang, P. F., Pemble, M. E. and Whatmore, R. W. (2015) 'Bismuth Self-Limiting Growth of Ultrathin BiFeO3 Films', Chemistry of Materials, 27(19), pp. 6508-6515. doi: 10.1021/acs.chemmater.5b03034 en
dc.identifier.volume 27 en
dc.identifier.startpage 6508 en
dc.identifier.endpage 6515 en
dc.identifier.issn 0897-4756
dc.identifier.doi 10.1021/acs.chemmater.5b03034 en
dc.description.abstract Bismuth ferrite (BiFeO3) is a widely studied material, because of its interesting multiferroic properties. Bismuth self-limiting growth of single-phase BiFeO3 (BFO) has previously been achieved using molecular beam epitaxy (MBE), but the growth of BFO by chemical vapor deposition (CVD) has proved to be very challenging, because of the volatile nature of bismuth. The growth window regarding temperature, pressure, and precursor flow rates that will give a pure perovskite BFO phase is normally very small. In this work, we have studied the metal–organic CVD (MOCVD) growth of epitaxial BFO thin films on SrTiO3 substrates and found that by carefully controlling the amount of the iron precursor, Fe(thd)3 (where thd = 2,2,6,6 tetra-methyl-3,5-heptanedionate), we were able to achieve bismuth self-liming growth, for the first time. The effect of the volume of the bismuth and iron precursors injected on the growth of BFO thin films is reported, and it has been found that the phase-pure films can be prepared when the Bi/Fe ratios are between 1.33 and 1.81 under temperature and pressure conditions of 650 °C and 10 mbar, respectively, and where the O2 gas flow was kept constant to 1000 sccm out of a total gas flow of 3000 sccm. Piezoresponse force microscopy (PFM) studies demonstrate the presence of bipolar switching in ultrathin BFO films. en
dc.description.sponsorship Irish Research Council for Science, Engineering and Technology (International Centre for Graduate Education in micro-& nano-Engineering, ICGEE); Higher Education Authority (HEA Program for Research in Third Level Institutions (2007−2011) via the INSPIRE program) en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher American Chemical Society, ACS en
dc.rights © 2015 American Chemical Society. This document is the Accepted Manuscript version of a Published Work that appeared in final form in Chemistry of Materials after peer review and technical editing by the publisher. To access the final edited and published work see en
dc.subject Bismuth ferrite en
dc.subject BiFeO3 en
dc.subject Chemical vapor deposition en
dc.subject Multiferroic tunnel junctions en
dc.subject Molecular beam method en
dc.subject Thickness dependence en
dc.subject Thin films en
dc.subject Epitaxy en
dc.subject GaAS en
dc.subject Property en
dc.subject PbTiO3 en
dc.subject Memory en
dc.title Bismuth self-limiting growth of ultrathin BiFeO3 films en
dc.type Article (peer-reviewed) en
dc.internal.authorcontactother Lynette Keeney, Tyndall Photonics, University College Cork, Cork, Ireland. +353-21-490-3000 Email: en
dc.internal.availability Full text available en 2019-03-26T09:11:08Z
dc.description.version Accepted Version en
dc.internal.rssid 360245804
dc.internal.wokid WOS:000362920700007
dc.contributor.funder Irish Research Council for Science, Engineering and Technology en
dc.contributor.funder Science Foundation Ireland en
dc.contributor.funder Higher Education Authority en
dc.description.status Peer reviewed en
dc.identifier.journaltitle Chemistry Materials en
dc.internal.copyrightchecked No
dc.internal.licenseacceptance Yes en
dc.internal.IRISemailaddress en
dc.relation.project info:eu-repo/grantAgreement/SFI/SFI Strategic Research Cluster/07/SRC/I1172/IE/SRC FORME: Functional Oxides and Related Materials for Electronics/ en
dc.relation.project info:eu-repo/grantAgreement/SFI/SFI Principal Investigator Programme (PI)/11/PI/1117/IE/New Materials and Devices for Optical Applications via the use of Hybrid Technologies: Colloidal Crystallisation and Advanced Thin Film Deposition/ en
dc.identifier.eissn 1520-5002

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