Loi, Ruggero; Iadanza, Simone; Roycroft, Brendan; O'Callaghan, James; Liu, Lei; Thomas, Kevin; Gocalińska, Agnieszka M.; Pelucchi, Emanuele; Farrell, Alexander; Kelleher, Steven; Gul, Raja Fazan; Trindade, António José; Gomez, David; O'Faolain, Liam; Corbett, Brian
(Institute of Electrical and Electronics Engineers (IEEE), 2019-12-09)
O-band InP etched facets lasers were heterogeneously integrated by micro-transfer-printing into a 1.54 µm deep recess created in the 3 µm thick oxide layer of a 220 nm SOI wafer. A 7 × 1.5 µm2 cross-section, 2 mm long ...