Switching at the contacts in Ge9Sb1Te5 phase-change nanowire devices

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dc.contributor.author Alialy, Sahar
dc.contributor.author Gabriel, Michelle
dc.contributor.author Davitt, Fionán
dc.contributor.author Holmes, Justin D.
dc.contributor.author Boland, John J.
dc.date.accessioned 2019-05-02T09:10:26Z
dc.date.available 2019-05-02T09:10:26Z
dc.date.issued 2019-04-26
dc.identifier.citation Alialy, S., Gabriel, M., Davitt, F., Holmes, J. D. and Boland, J. J. (2019) 'Switching at the contacts in Ge9Sb1Te5 phase-change nanowire devices', Nanotechnology. doi: 10.1088/1361-6528/ab1cf8 en
dc.identifier.issn 1361-6528
dc.identifier.uri http://hdl.handle.net/10468/7835
dc.identifier.doi 10.1088/1361-6528/ab1cf8 en
dc.description.abstract Phase-change random access memory is a promising approach to non-volatile memory. However, the inability to secure consistent, reliable switching on a nanometre scale may limit its practical use for high density applications. Here, we report on the switching behaviour of PCRAM cells comprised of single crystalline Ge9Sb1Te5 (GST) nanowires. We show that device switching is dominated by the contacts and does not result in a resistance change within the bulk of the wire. For the devices studied, the typical contact resistance was ~30 kΩ, whereas the resistance of the GST channel was 1.8 kΩ. The applied voltage was predominately dropped across the passivating oxide on the surface of the GST nanowires, resulting in local resistive switching at the contacts and local power dissipation, which limited the endurance of the devices produced. The optimal device must balance low resistance contacts with a more resistive channel, to facilitate phase change switching within the nanowires. These results highlight the importance of contact formation on the switching properties in phase change devices and help guide the future design of more reliable neuromorphic devices. en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher IOP Publishing en
dc.relation.uri http://iopscience.iop.org/10.1088/1361-6528/ab1cf8
dc.rights © 2019, IOP Publishing Ltd. This Accepted Manuscript is available for reuse under a CC BY-NC-ND 3.0 licence after a 12 month embargo period. After the embargo period, everyone is permitted to use copy and redistribute this article for non-commercial purposes only, provided that they adhere to all the terms of the licence https://creativecommons.org/licences/by-nc-nd/3.0 en
dc.rights.uri https://creativecommons.org/licences/by-nc-nd/3.0 en
dc.subject Neuromorphic en
dc.subject Switching en
dc.subject Contact resistance en
dc.subject Phase change en
dc.subject Nanowire en
dc.title Switching at the contacts in Ge9Sb1Te5 phase-change nanowire devices en
dc.type Article (peer-reviewed) en
dc.internal.authorcontactother Justin D. Holmes, Chemistry, University College Cork, Cork, Ireland. +353-21-490-3000 Email: j.holmes@ucc.ie en
dc.internal.availability Full text available en
dc.check.info Access to this article is restricted until 12 months after publication by request of the publisher. en
dc.check.date 2020-04-26
dc.date.updated 2019-05-02T08:56:40Z
dc.description.version Accepted Version en
dc.internal.rssid 483721352
dc.contributor.funder European Research Council en
dc.contributor.funder Science Foundation Ireland en
dc.description.status Peer reviewed en
dc.identifier.journaltitle Nanotechnology en
dc.internal.copyrightchecked Yes
dc.internal.licenseacceptance Yes en
dc.internal.IRISemailaddress j.holmes@ucc.ie en
dc.internal.bibliocheck In press. Check vol / issue / page range / doi. Amend citation as necessary. en
dc.relation.project info:eu-repo/grantAgreement/EC/FP7::SP2::ERC/321160/EU/Cognitive Networks for Intelligent Materials and Devices/COGNET en
dc.relation.project info:eu-repo/grantAgreement/SFI/SFI Research Centres/12/RC/2278/IE/Advanced Materials and BioEngineering Research Centre (AMBER)/ en
dc.relation.project info:eu-repo/grantAgreement/SFI/SFI Investigator Programme/12/IA/1482/IE/Atom Level Engineering of Material-on-Insulator Devices and Sensors/ en
dc.identifier.eissn 1361-6528


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© 2019, IOP Publishing Ltd. This Accepted Manuscript is available for reuse under a CC BY-NC-ND 3.0 licence after a 12 month embargo period. After the embargo period, everyone is permitted to use copy and redistribute this article for non-commercial purposes only, provided that they adhere to all the terms of the licence https://creativecommons.org/licences/by-nc-nd/3.0 Except where otherwise noted, this item's license is described as © 2019, IOP Publishing Ltd. This Accepted Manuscript is available for reuse under a CC BY-NC-ND 3.0 licence after a 12 month embargo period. After the embargo period, everyone is permitted to use copy and redistribute this article for non-commercial purposes only, provided that they adhere to all the terms of the licence https://creativecommons.org/licences/by-nc-nd/3.0
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