One-step fabrication of GeSn branched nanowires

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dc.contributor.author Doherty, Jessica
dc.contributor.author Biswas, Subhajit
dc.contributor.author McNulty, David
dc.contributor.author Downing, Clive
dc.contributor.author Raha, Sreyan
dc.contributor.author O'Regan, Colm
dc.contributor.author Singha, Achintya
dc.contributor.author O'Dwyer, Colm
dc.contributor.author Holmes, Justin D.
dc.date.accessioned 2019-06-12T15:02:28Z
dc.date.available 2019-06-12T15:02:28Z
dc.date.issued 2019-05-22
dc.identifier.citation erty, J., Biswas, S., McNulty, D., Downing, C., Raha, S., O’Regan, C., Singha, A., O’Dwyer, C. and Holmes, J. D. (2019) 'One-Step Fabrication of GeSn Branched Nanowires', Chemistry of Materials, 31(11), pp. 4016-4024. doi: 10.1021/acs.chemmater.9b00475 en
dc.identifier.volume 31 en
dc.identifier.issued 11 en
dc.identifier.startpage 4016 en
dc.identifier.endpage 4024 en
dc.identifier.issn 0897-4756
dc.identifier.uri http://hdl.handle.net/10468/8052
dc.identifier.doi 10.1021/acs.chemmater.9b00475 en
dc.description.abstract We report for the first time the self-catalyzed, single-step growth of branched GeSn nanostructures by a vapor–liquid–solid mechanism. These typical GeSn nanostructures consist of ⟨111⟩-oriented, Sn-rich (∼8 atom %) GeSn “branches” grown epitaxially on GeSn “trunks”, with a Sn content of ∼4 atom %. The trunks were seeded from Au0.80Ag0.20 nanoparticles followed by the catalytic growth of secondary branches (diameter ∼ 50 nm) from the excess of Sn on the sidewalls of the trunks, as determined by high-resolution electron microscopy and energy-dispersive X-ray analysis. The nanowires, with ⟨111⟩-directed GeSn branches oriented at ∼70° to the trunks, have no apparent defects or change in crystal structure at the trunk–branch interface; structural quality is retained at the interface with epitaxial crystallographic relation. The electrochemical performance of these highly ordered GeSn nanostructures was explored as a potential anode material for Li-ion batteries, due to their high surface-to-volume ratio and increased charge carrier pathways. The unique structure of the branched nanowires led to high specific capacities comparable to, or greater than, those of conventional Ge nanowire anode materials and Ge1–xSnx nanocrystals. en
dc.description.sponsorship Irish Research Council (Postgraduate Scholarship (Grant No: GOIPG/2015/2772)) en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher American Chemical Society, ACS en
dc.relation.uri https://pubs.acs.org/doi/full/10.1021/acs.chemmater.9b00475?ai=6650
dc.rights © 2019 American Chemical Society. This document is the Accepted Manuscript version of a Published Work that appeared in final form in Chemistry of Materials, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see https://pubs.acs.org/doi/10.1021/acs.chemmater.9b00475 en
dc.subject Nanowires en
dc.subject Germanium-tin en
dc.subject Branched nanostructure en
dc.subject Li-ion battery en
dc.title One-step fabrication of GeSn branched nanowires en
dc.type Article (peer-reviewed) en
dc.internal.authorcontactother Justin D. Holmes, Chemistry, University College Cork, Cork, Ireland. +353-21-490-3000 Email: j.holmes@ucc.ie en
dc.internal.availability Full text available en
dc.check.info Access to this article is restricted until 12 months after publication by request of the publisher. en
dc.check.date 2020-05-22
dc.date.updated 2019-06-11T16:42:42Z
dc.description.version Accepted Version en
dc.internal.rssid 488616794
dc.contributor.funder Science Foundation Ireland en
dc.contributor.funder Irish Research Council en
dc.description.status Peer reviewed en
dc.identifier.journaltitle Chemistry of Materials en
dc.internal.copyrightchecked No
dc.internal.licenseacceptance Yes en
dc.internal.IRISemailaddress j.holmes@ucc.ie en
dc.internal.IRISemailaddress c.odwyer@ucc.ie en
dc.relation.project info:eu-repo/grantAgreement/SFI/SFI Investigator Programme/14/IA/2513/IE/Silicon Compatible, Direct Band-Gap Nanowire Materials For Beyond-CMOS Devices/ en
dc.identifier.eissn 1520-5002


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