Semi-classical modeling of nanoscale nMOSFETs with III-V channel

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Semi-classical modeling of nanoscale nMOSFETs with III-V channel

Palestri, Pierpaolo; Caruso, Enrico; Badami, Oves; Driussi, Francesco; Esseni, David; Selmi, Luca
Date: 2019-06-06
Copyright: © 2019, IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.
Related: https://ieeexplore.ieee.org/document/8731143
http://ewh.ieee.org/conf/edtm/2019/
Citation: Palestri, P., Caruso, E., Badami, O., Driussi, F., Esseni, D. and Selmi, L. (2019) 'Semi-classical modeling of nanoscale nMOSFETs with III-V channel', 2019 Electron Devices Technology and Manufacturing Conference (EDTM), Singapore, 12-15 March, pp. 234-236. doi: 10.1109/EDTM.2019.8731143
Published Version: 10.1109/EDTM.2019.8731143

Abstract:

We review recent results on the modeling of nanoscale nMOSFETs with III-V compounds channel material. The focus will be on semi-classical transport modeling in short channel devices; we will show that back-scattering in the channel still influences the device performance, and thus affects the choice of the channel material. The model ingredients necessary to describe III-V MOSFETs will be discussed, and major differences compared to modeling of silicon FETs will be highlighted.

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