Citation:Palestri, P., Caruso, E., Badami, O., Driussi, F., Esseni, D. and Selmi, L. (2019) 'Semi-classical modeling of nanoscale nMOSFETs with III-V channel', 2019 Electron Devices Technology and Manufacturing Conference (EDTM), Singapore, 12-15 March, pp. 234-236. doi: 10.1109/EDTM.2019.8731143
We review recent results on the modeling of nanoscale nMOSFETs with III-V compounds channel material. The focus will be on semi-classical transport modeling in short channel devices; we will show that back-scattering in the channel still influences the device performance, and thus affects the choice of the channel material. The model ingredients necessary to describe III-V MOSFETs will be discussed, and major differences compared to modeling of silicon FETs will be highlighted.
This website uses cookies. By using this website, you consent to the use of cookies in accordance with the UCC Privacy and Cookies Statement. For more information about cookies and how you can disable them, visit our Privacy and Cookies statement