Semi-classical modeling of nanoscale nMOSFETs with III-V channel

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Palestri, Pierpaolo
Caruso, Enrico
Badami, Oves
Driussi, Francesco
Esseni, David
Selmi, Luca
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Institute of Electrical and Electronics Engineers (IEEE)
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We review recent results on the modeling of nanoscale nMOSFETs with III-V compounds channel material. The focus will be on semi-classical transport modeling in short channel devices; we will show that back-scattering in the channel still influences the device performance, and thus affects the choice of the channel material. The model ingredients necessary to describe III-V MOSFETs will be discussed, and major differences compared to modeling of silicon FETs will be highlighted.
III-V semiconductors , MOSFET , Nanoelectronics , Semiconductor device models , III-V compounds channel material , Semiclassical transport modeling , Short channel devices , Nanoscale nMOSFET , III-V MOSFET , Channel back-scattering , Scattering , Nanoscale devices , Semiconductor device modeling , Quantization (signal) , Silicon , Ions , Simulation , Monte Carlo , III-V compounds
Palestri, P., Caruso, E., Badami, O., Driussi, F., Esseni, D. and Selmi, L. (2019) 'Semi-classical modeling of nanoscale nMOSFETs with III-V channel', 2019 Electron Devices Technology and Manufacturing Conference (EDTM), Singapore, 12-15 March, pp. 234-236. doi: 10.1109/EDTM.2019.8731143
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