Semi-classical modeling of nanoscale nMOSFETs with III-V channel
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Accepted Version
Date
2019-06-06
Authors
Palestri, Pierpaolo
Caruso, Enrico
Badami, Oves
Driussi, Francesco
Esseni, David
Selmi, Luca
Journal Title
Journal ISSN
Volume Title
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Published Version
Abstract
We review recent results on the modeling of nanoscale nMOSFETs with III-V compounds channel material. The focus will be on semi-classical transport modeling in short channel devices; we will show that back-scattering in the channel still influences the device performance, and thus affects the choice of the channel material. The model ingredients necessary to describe III-V MOSFETs will be discussed, and major differences compared to modeling of silicon FETs will be highlighted.
Description
Keywords
III-V semiconductors , MOSFET , Nanoelectronics , Semiconductor device models , III-V compounds channel material , Semiclassical transport modeling , Short channel devices , Nanoscale nMOSFET , III-V MOSFET , Channel back-scattering , Scattering , Nanoscale devices , Semiconductor device modeling , Quantization (signal) , Silicon , Ions , Simulation , Monte Carlo , III-V compounds
Citation
Palestri, P., Caruso, E., Badami, O., Driussi, F., Esseni, D. and Selmi, L. (2019) 'Semi-classical modeling of nanoscale nMOSFETs with III-V channel', 2019 Electron Devices Technology and Manufacturing Conference (EDTM), Singapore, 12-15 March, pp. 234-236. doi: 10.1109/EDTM.2019.8731143
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