Oriented growth of single-crystalline Bi2S3 nanowire arrays

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10434_Bi2S3-CPhC.pdf(1.86 MB)
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Date
2007-01-26
Authors
Xu, Ju
Petkov, Nikolay
Wu, Xueyan
Iacopino, Daniela
Quinn, Aidan J.
Redmond, Gareth
Bein, Thomas
Morris, Michael A.
Holmes, Justin D.
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Volume Title
Publisher
Wiley
Published Version
10.1002/cphc.200600681
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Abstract
Highly oriented single crystal Bi2S3 nanowire arrays are formed inside anodised alumina membranes (AAMs) using a new solventless approach. A high yield of pore filling is achieved by injecting the melted single source precursor liquid into the channels followed by thermolysis. The absorption profile (bandgap) of these nanowires shifts to higher energies as the mean diameter of the nanowires decreases.
Description
Keywords
Electrochemistry , Mesoporous materials , Nanowires , Semiconductors , Solid-state structures
Citation
Xu, J., Petkov, N., Wu, X., Iacopino, D., Quinn, A. J., Redmond, G., Bein, T., Morris, M. A. and Holmes, J. D. (2007) 'Oriented Growth of Single-Crystalline Bi2S3 Nanowire Arrays', ChemPhysChem, 8(2), pp. 235-240. doi: 10.1002/cphc.200600681
Link to publisher’s version
https://onlinelibrary.wiley.com/doi/full/10.1002/cphc.200600681
URI
https://hdl.handle.net/10468/8139
Collections
Chemistry - Journal Articles
Tyndall National Institute - Journal Articles
Copyright
© 2007 Wiley-VCH Verlag GmbH. This is the peer reviewed version of the following article: (2007), Oriented Growth of Single‐Crystalline Bi2S3 Nanowire Arrays. ChemPhysChem, 8: 235-240, which has been published in final form at https://doi.org/10.1002/cphc.200600681. This article may be used for non-commercial purposes in accordance with Wiley Terms and Conditions for Self-Archiving.