Oriented growth of single-crystalline Bi2S3 nanowire arrays

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Oriented growth of single-crystalline Bi2S3 nanowire arrays

Xu, Ju; Petkov, Nikolay; Wu, Xueyan; Iacopino, Daniela; Quinn, Aidan J.; Redmond, Gareth; Bein, Thomas; Morris, Michael A.; Holmes, Justin D.
Date: 2007-01-26
Copyright: © 2007 Wiley-VCH Verlag GmbH. This is the peer reviewed version of the following article: (2007), Oriented Growth of Single‐Crystalline Bi2S3 Nanowire Arrays. ChemPhysChem, 8: 235-240, which has been published in final form at https://doi.org/10.1002/cphc.200600681. This article may be used for non-commercial purposes in accordance with Wiley Terms and Conditions for Self-Archiving.
Related: https://onlinelibrary.wiley.com/doi/full/10.1002/cphc.200600681
Citation: Xu, J., Petkov, N., Wu, X., Iacopino, D., Quinn, A. J., Redmond, G., Bein, T., Morris, M. A. and Holmes, J. D. (2007) 'Oriented Growth of Single-Crystalline Bi2S3 Nanowire Arrays', ChemPhysChem, 8(2), pp. 235-240. doi: 10.1002/cphc.200600681
Published Version: 10.1002/cphc.200600681

Abstract:

Highly oriented single crystal Bi2S3 nanowire arrays are formed inside anodised alumina membranes (AAMs) using a new solventless approach. A high yield of pore filling is achieved by injecting the melted single source precursor liquid into the channels followed by thermolysis. The absorption profile (bandgap) of these nanowires shifts to higher energies as the mean diameter of the nanowires decreases.

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