Pore directionality and correlation lengths of mesoporous silica channels aligned by physical epitaxy

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dc.contributor.author Bolger, Ciara T.
dc.contributor.author Farrell, Richard A.
dc.contributor.author Hughes, Gareth M.
dc.contributor.author Morris, Michael A.
dc.contributor.author Petkov, Nikolay
dc.contributor.author Holmes, Justin D.
dc.date.accessioned 2019-07-12T14:02:47Z
dc.date.available 2019-07-12T14:02:47Z
dc.date.issued 2009-07-13
dc.identifier.citation Bolger, C. T., Farrell, R. A., Hughes, G. M., Morris, M. A., Petkov, N. and Holmes, J. D. (2009) 'Pore Directionality and Correlation Lengths of Mesoporous Silica Channels Aligned by Physical Epitaxy', ACS Nano, 3(8), pp. 2311-2319. doi: 10.1021/nn900408q en
dc.identifier.volume 3 en
dc.identifier.issued 8 en
dc.identifier.startpage 2311 en
dc.identifier.endpage 2319 en
dc.identifier.issn 1936-0851
dc.identifier.uri http://hdl.handle.net/10468/8157
dc.identifier.doi 10.1021/nn900408q en
dc.description.abstract Herein we report on the alignment of mesoporous silica, a potential host for sub-10 nm nanostructures, by controlling its deposition within patterned substrates. In-depth characterization of the correlation lengths (length of a linear porous channel), defects of the porous network (delamination), and how the silica mesopores register to the micrometer-sized substrate pattern was achieved by means of novel focused ion beam (FIB) sectioning and in situ SEM imaging, which to our knowledge has not previously been reported for such a system. Our findings establish that, under confinement, directed deposition of the sol within channeled substrates, where the cross-sectional aspect ratio of the channels approaches unity, induces alignment of the mesopores along the length of the channels. The pore correlation length was found to extend beyond the micrometer scale, with high pore uniformity from channel to channel observed with infrequent delamination defects. Such information on pore correlation lengths and defect densities is critical for subsequent nanowire growth within the mesoporous channels, contact layout (electrode deposition etc.), and possible device architectures. en
dc.description.sponsorship Higher Education Authority (Higher Education Authority Program for Research in Third Level Institutions (2007-2011) via the INSPIRE programme) en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher American Chemical Society, ACS en
dc.relation.uri https://pubs.acs.org/doi/abs/10.1021/nn900408q
dc.rights © 2009 American Chemical Society. This document is the Accepted Manuscript version of a Published Work that appeared in final form in ACS Nano, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see https://pubs.acs.org/doi/abs/10.1021/nn900408q en
dc.subject Pore directionality en
dc.subject Physical epitaxy en
dc.subject Mesoporous silica en
dc.subject Directed self-assembly en
dc.subject Correlation length en
dc.subject in situ SEM imaging en
dc.title Pore directionality and correlation lengths of mesoporous silica channels aligned by physical epitaxy en
dc.type Article (peer-reviewed) en
dc.internal.authorcontactother Justin D. Holmes, Chemistry, University College Cork, Cork, Ireland. +353-21-490-3000 Email: j.holmes@ucc.ie en
dc.internal.availability Full text available en
dc.date.updated 2019-06-28T15:48:37Z
dc.description.version Accepted Version en
dc.internal.rssid 17688924
dc.contributor.funder Irish Research Council for Science, Engineering and Technology en
dc.contributor.funder Science Foundation Ireland en
dc.contributor.funder Higher Education Authority en
dc.description.status Peer reviewed en
dc.identifier.journaltitle ACS Nano en
dc.internal.copyrightchecked No
dc.internal.licenseacceptance Yes en
dc.internal.IRISemailaddress j.holmes@ucc.ie en
dc.relation.project info:eu-repo/grantAgreement/SFI/SFI Principal Investigator Programme (PI)/03/IN.3/I375/IE/The assembly of electronically important materials as structurally and size controlled nanowires into 3-dimensional architectures and construction of Prototype circuitry there from./ en


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