Atomically flat low-resistive germanide contacts formed by laser thermal anneal

Show simple item record Shayesteh, Maryam Huet, Karim Toqué-Tresonne, Inès Negru, Razvan Daunt, Chris L. M. Kelly, Niall O'Connell, Dan Yu, Ran Djara, Vladimir Carolan, Patrick B. Petkov, Nikolay Duffy, Ray 2019-08-06T11:52:11Z 2019-08-06T11:52:11Z 2013-06-12
dc.identifier.citation Shayesteh, M., Huet, K., Toqué-Tresonne, I., Negru, R., Daunt, C. L. M., Kelly, N., O'Connell, D., Yu, R., Djara, Vl., Carolan, P. B., Petkov, N. and Duffy, R. (2013) 'Atomically flat low-resistive germanide contacts formed by laser thermal anneal', IEEE Transactions on Electron Devices, 60(7), pp. 2178-2185. doi: 10.1109/TED.2013.2263336 en
dc.identifier.volume 60 en
dc.identifier.issued 7 en
dc.identifier.startpage 2178 en
dc.identifier.endpage 2185 en
dc.identifier.issn 0018-9383
dc.identifier.doi 10.1109/TED.2013.2263336 en
dc.description.abstract In this paper, state-of-the-art laser thermal annealing is used to form germanide contacts on n-doped Ge and is systematically compared with results generated by conventional rapid thermal annealing. Surface topography, interface quality, crystal structure, and material stoichiometry are explored for both annealing techniques. For electrical characterization, specific contact resistivity and thermal stability are extracted. It is shown that laser thermal annealing can produce a uniform contact with a remarkably smooth substrate interface with specific contact resistivity two to three orders of magnitude lower than the equivalent rapid thermal annealing case. It is shown that a specific contact resistivity of 2.84 × 10 -7 Ω·cm 2 is achieved for optimized laser thermal anneal energy density conditions. en
dc.description.sponsorship Higher Education Authority (Programme for Research in Third-Level Institutions) en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher Institute of Electrical and Electronics Engineers (IEEE) en
dc.rights © 2013, IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. en
dc.subject Electrical contacts en
dc.subject Laser beam annealing en
dc.subject Flat low resistive germanide contacts en
dc.subject Laser thermal annealing en
dc.subject Rapid thermal annealing en
dc.subject Surface topography en
dc.subject Interface quality en
dc.subject Crystal structure en
dc.subject Material stoichiometry en
dc.subject Annealing technique en
dc.subject Electrical characterization en
dc.subject Thermal stability en
dc.subject Smooth substrate interface en
dc.subject Specific contact resistivity en
dc.subject Nickel en
dc.subject Substrates en
dc.subject Lasers en
dc.subject Contacts en
dc.subject Surface treatment en
dc.subject Contact resistance en
dc.subject Germanium en
dc.subject Sheet resistance en
dc.subject Transfer length method en
dc.subject TLM en
dc.subject Optimized laser thermal anneal energy density conditions en
dc.title Atomically flat low-resistive germanide contacts formed by laser thermal anneal en
dc.type Article (peer-reviewed) en
dc.internal.authorcontactother Raymond Duffy, Tyndall Micronano Electronics, University College Cork, Cork, Ireland. +353-21-490-3000 Email: en
dc.internal.availability Full text available en 2019-08-06T11:40:51Z
dc.description.version Accepted Version en
dc.internal.rssid 495612813
dc.contributor.funder Science Foundation Ireland en
dc.contributor.funder Higher Education Authority en
dc.description.status Peer reviewed en
dc.identifier.journaltitle IEEE Transactions on Electron Devices en
dc.internal.copyrightchecked Yes
dc.internal.licenseacceptance Yes en
dc.internal.IRISemailaddress en
dc.relation.project info:eu-repo/grantAgreement/SFI/SFI Starting Investigator Research Grant (SIRG)/09/SIRG/I1623/IE/N-type doping in germanium for sub-20nm technology CMOS devices/ en
dc.relation.project info:eu-repo/grantAgreement/SFI/SFI Starting Investigator Research Grant (SIRG)/09/SIRG/I1621/IE/Tuning surface and dopant properties of silicon and germanium nanowires for high performance nanowire-based field-effect transistors/ en
dc.identifier.eissn 1557-9646

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