Monolayer doping of silicon-germanium alloys: a balancing act between phosphorus incorporation and strain relaxation

Show simple item record Kennedy, Noel Duffy, Ray Mirabelli, Gioele Eaton, Luke Petkov, Nikolay Holmes, Justin D. Hatem, Chris Walsh, Lee Long, Brenda 2019-08-26T13:14:35Z 2019-08-26T13:14:35Z 2019-07-09
dc.identifier.citation Kennedy, N., Duffy, R., Mirabelli, G., Eaton, L., Petkov, N., Holmes, J. D., Hatem, C., Walsh, L. and Long, B. (2019) 'Monolayer doping of silicon-germanium alloys: A balancing act between phosphorus incorporation and strain relaxation', Journal of Applied Physics, 126 (2), 025103 (9 pp). 10.1063/1.5086356 en
dc.identifier.volume 126 en
dc.identifier.issued 2 en
dc.identifier.startpage 1 en
dc.identifier.endpage 9 en
dc.identifier.issn 0021-8979
dc.identifier.doi 10.1063/1.5086356 en
dc.description.abstract This paper presents the application of monolayer doping (MLD) to silicon-germanium (SiGe). This study was carried out for phosphorus dopants on wafers of epitaxially grown thin films of strained SiGe on silicon with varying concentrations of Ge (18%, 30%, and 60%). The challenge presented here is achieving dopant incorporation while minimizing strain relaxation. The impact of high temperature annealing on the formation of defects due to strain relaxation of these layers was qualitatively monitored by cross-sectional transmission electron microscopy and atomic force microscopy prior to choosing an anneal temperature for the MLD drive-in. Though the bulk SiGe wafers provided are stated to have 18%, 30%, and 60% Ge in the epitaxial SiGe layers, it does not necessarily mean that the surface stoichiometry is the same, and this may impact the reaction conditions. X-ray photoelectron spectroscopy (XPS) and angle-resolved XPS were carried out to compare the bulk and surface stoichiometry of SiGe to allow tailoring of the reaction conditions for chemical functionalization. Finally, dopant profiling was carried out by secondary ion mass spectrometry to determine the impurity concentrations achieved by MLD. It is evident from the results that phosphorus incorporation decreases for increasing mole fraction of Ge, when the rapid thermal annealing temperature is a fixed amount below the melting temperature of each alloy. en
dc.description.sponsorship Enterprise Ireland (Project Nos. IP-2015-0368 and IP-2017-0605); European Regional Development Fund (ERDF under Ireland’s European Structural and Investment Funds Programmes 2014–2020) en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher AIP Publishing en
dc.rights © 2019, AIP Publishing. This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Journal of Applied Physics 126:2 and may be found at en
dc.subject Si-Ge alloys en
dc.subject Atomic force microscopy en
dc.subject High resolution transmission electron microscopy en
dc.subject Monolayers en
dc.subject Phosphorus en
dc.subject Rapid thermal annealing en
dc.subject Secondary ion mass spectrometry en
dc.subject Semiconductor doping en
dc.subject Silicon wafers en
dc.subject Stoichiometry en
dc.subject Strain relaxation en
dc.subject X ray photoelectron spectroscopy en
dc.title Monolayer doping of silicon-germanium alloys: a balancing act between phosphorus incorporation and strain relaxation en
dc.type Article (peer-reviewed) en
dc.internal.authorcontactother Justin D. Holmes, Chemistry, University College Cork, Cork, Ireland. +353-21-490-3000 Email: en
dc.internal.availability Full text available en 2019-08-26T12:56:34Z
dc.description.version Published Version en
dc.internal.rssid 498059921
dc.internal.rssid 493532857
dc.contributor.funder Enterprise Ireland en
dc.contributor.funder European Regional Development Fund en
dc.description.status Peer reviewed en
dc.identifier.journaltitle Journal of Applied Physics en
dc.internal.copyrightchecked No
dc.internal.licenseacceptance Yes en
dc.internal.IRISemailaddress en
dc.internal.IRISemailaddress en
dc.internal.IRISemailaddress en
dc.identifier.articleid 25103 en

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