Broadband semiconductor light sources operating at 1060 nm based on InAs:Sb/GaAs submonolayer quantum dots
Achtstein, A. W.
Pohl, U. W.
Institute of Electrical and Electronics Engineers (IEEE)
In this paper, we investigate the potential of submonolayer-grown InAs:Sb/GaAs quantum dots as active medium for opto-electronic devices emitting in the 1060 nm spectral range. Grown as multiple sheets of InAs in a GaAs matrix, submonolayer quantum dots yield light-emitting devices with large material gain and fast recovery dynamics. Alloying these structures with antimony enhances the carrier localization and red shifts the emission, whereas dramatically broadening the optical bandwidth. In a combined experimental and numerical study, we trace this effect to an Sb-induced bimodal distribution of localized and delocalized exciton states. While the former do not participate in the lasing process, they give rise to a bandwidth broadening at superluminescence operation and optical amplification. Above threshold laser properties like gain and slope efficiency are mainly determined by the delocalized fraction of carriers.
Quantum dots , Semiconductor materials , Semiconductor lasers , Semiconductor optical amplifiers , Gallium arsenide , Optical imaging , Stimulated emission , Optical waveguides , Biomedical optical imaging , Optical saturation , Optical pulses , Antimony , Excitons , Gallium arsenide , III-V semiconductors , Indium compounds , Semiconductor lasers , Semiconductor quantum dots
Herzog, B., Lingnau, B., Kolarczik, M., Helmrich, S., Achtstein, A. W., Thommes, K., Alhussein, F., Quandt, D., Strittmatter, A., Pohl, U. W., Brox, O., Weyers, M., Woggon, U., Lüdge, K. and Owschimikow, N. (2019) 'Broadband Semiconductor Light Sources Operating at 1060 nm Based on InAs:Sb/GaAs Submonolayer Quantum Dots', IEEE Journal of Selected Topics in Quantum Electronics, 25(6), pp. 1-10. doi: 10.1109/JSTQE.2019.2919763
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