Broadband semiconductor light sources operating at 1060 nm based on InAs:Sb/GaAs submonolayer quantum dots

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dc.contributor.author Herzog, B.
dc.contributor.author Lingnau, Benjamin
dc.contributor.author Kolarczik, M.
dc.contributor.author Helmrich, S.
dc.contributor.author Achtstein, A. W.
dc.contributor.author Thommes, K.
dc.contributor.author Alhussein, F.
dc.contributor.author Quandt, D.
dc.contributor.author Strittmatter, A.
dc.contributor.author Pohl, U. W.
dc.contributor.author Brox, O.
dc.contributor.author Weyers, M.
dc.contributor.author Woggon, U.
dc.contributor.author Lüdge, Kathy
dc.contributor.author Owschimikow, N.
dc.date.accessioned 2019-08-26T14:47:18Z
dc.date.available 2019-08-26T14:47:18Z
dc.date.issued 2019-05-29
dc.identifier.citation Herzog, B., Lingnau, B., Kolarczik, M., Helmrich, S., Achtstein, A. W., Thommes, K., Alhussein, F., Quandt, D., Strittmatter, A., Pohl, U. W., Brox, O., Weyers, M., Woggon, U., Lüdge, K. and Owschimikow, N. (2019) 'Broadband Semiconductor Light Sources Operating at 1060 nm Based on InAs:Sb/GaAs Submonolayer Quantum Dots', IEEE Journal of Selected Topics in Quantum Electronics, 25(6), pp. 1-10. doi: 10.1109/JSTQE.2019.2919763 en
dc.identifier.volume 25 en
dc.identifier.issued 6 en
dc.identifier.startpage 1 en
dc.identifier.endpage 10 en
dc.identifier.issn 1077-260X
dc.identifier.uri http://hdl.handle.net/10468/8393
dc.identifier.doi 10.1109/JSTQE.2019.2919763 en
dc.description.abstract In this paper, we investigate the potential of submonolayer-grown InAs:Sb/GaAs quantum dots as active medium for opto-electronic devices emitting in the 1060 nm spectral range. Grown as multiple sheets of InAs in a GaAs matrix, submonolayer quantum dots yield light-emitting devices with large material gain and fast recovery dynamics. Alloying these structures with antimony enhances the carrier localization and red shifts the emission, whereas dramatically broadening the optical bandwidth. In a combined experimental and numerical study, we trace this effect to an Sb-induced bimodal distribution of localized and delocalized exciton states. While the former do not participate in the lasing process, they give rise to a bandwidth broadening at superluminescence operation and optical amplification. Above threshold laser properties like gain and slope efficiency are mainly determined by the delocalized fraction of carriers. en
dc.description.sponsorship Deutsche Forschungsgemeinschaft (via SFB 787, GRK 1558, and AC 290-2/1) en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher Institute of Electrical and Electronics Engineers (IEEE) en
dc.relation.uri https://ieeexplore.ieee.org/document/8725534
dc.rights © 2019 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. en
dc.subject Quantum dots en
dc.subject Semiconductor materials en
dc.subject Semiconductor lasers en
dc.subject Semiconductor optical amplifiers en
dc.subject Gallium arsenide en
dc.subject Optical imaging en
dc.subject Stimulated emission en
dc.subject Optical waveguides en
dc.subject Biomedical optical imaging en
dc.subject Optical saturation en
dc.subject Optical pulses en
dc.subject Antimony en
dc.subject Excitons en
dc.subject Gallium arsenide en
dc.subject III-V semiconductors en
dc.subject Indium compounds en
dc.subject Semiconductor lasers en
dc.subject Semiconductor quantum dots en
dc.title Broadband semiconductor light sources operating at 1060 nm based on InAs:Sb/GaAs submonolayer quantum dots en
dc.type Article (peer-reviewed) en
dc.internal.authorcontactother Benjamin Lingnau, Physics, University College Cork, Cork, Ireland. +353-21-490-3000 Email: benjamin.lingnau@ucc.ie en
dc.internal.availability Full text available en
dc.description.version Accepted Version en
dc.contributor.funder Deutsche Forschungsgemeinschaft en
dc.description.status Peer reviewed en
dc.identifier.journaltitle IEEE Journal of Selected Topics in Quantum Electronics en
dc.internal.IRISemailaddress benjamin.lingnau@ucc.ie en


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