High-power single transverse and polarization mode VCSEL for silicon photonics integration

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Haglund, Erik
Jahed, Mehdi
Gustavsson, Johan S.
Larsson, Anders
Goyvaerts, Jeroen
Baets, Roel
Roelkens, Gunther
Rensing, Marc
O'Brien, Peter A.
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OSA - The Optical Society
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We demonstrate a 6.5 mW single transverse and polarization mode GaAs-based oxide-confined VCSEL at 850 nm. High power is enabled by a relatively large oxide aperture and an epitaxial design for low resistance, low optical loss, and high slope efficiency VCSELs. With the oxide aperture supporting multiple polarization unrestrained transverse modes, single transverse and polarization mode operation is achieved by a transverse and polarization mode filter etched into the surface of the VCSEL. While the VCSEL is specifically designed for light source integration on a silicon photonic integrated circuit, its performance in terms of power, spectral purity, polarization, and beam properties are of great interest for a large range of applications.
Electron beam lithography , Grating couplers , Optical fields , Polarization control , Scanning electron microscopy , Vertical cavity surface emitting lasers
Haglund, E., Jahed, M., Gustavsson, J. S., Larsson, A., Goyvaerts, J., Baets, R., Roelkens, G., Rensing, M. and O’Brien, P. (2019) 'High-power single transverse and polarization mode VCSEL for silicon photonics integration', Optics Express, 27(13), pp. 18892-18899. (7pp.) DOI: 10.1364/OE.27.018892