Ge1-xSnx alloys: Consequences of band mixing effects for the evolution of the band gap Γ-character with Sn concentration

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dc.contributor.author Marko, Igor P.
dc.contributor.author Schulz, Stefan
dc.contributor.author O'Halloran, Edmond
dc.contributor.author Ghetmiri, Seyed
dc.contributor.author Du, Wei
dc.contributor.author Zhou, Yiyin
dc.contributor.author Yu, Shui-Qing
dc.contributor.author Margetis, Joe
dc.contributor.author Tolle, John
dc.contributor.author O'Reilly, Eoin P.
dc.contributor.author Sweeney, Stephen J.
dc.date.accessioned 2019-10-23T10:01:34Z
dc.date.available 2019-10-23T10:01:34Z
dc.date.issued 2019-04-04
dc.identifier.citation Eales, T. D., Marko, I. P., Schulz, S., O’Halloran, E., Ghetmiri, S., Du, W., Zhou, Y., Yu, S.-Q., Margetis, J., Tolle, J., O’Reilly, E. P. and Sweeney, S. J. (2019) 'Ge1−xSnx alloys: Consequences of band mixing effects for the evolution of the band gap Γ-character with Sn concentration', Scientific Reports, 9(1), 14077. (10pp.) DOI: 10.1038/s41598-019-50349-z en
dc.identifier.volume 9 en
dc.identifier.issued 1 en
dc.identifier.startpage 1 en
dc.identifier.endpage 10 en
dc.identifier.uri http://hdl.handle.net/10468/8842
dc.identifier.doi 10.1038/s41598-019-50349-z en
dc.description.abstract In this work we study the nature of the band gap in GeSn alloys for use in silicon-based lasers. Special attention is paid to Sn-induced band mixing effects. We demonstrate from both experiment and ab-initio theory that the (direct) Γ-character of the GeSn band gap changes continuously with alloy composition and has significant Γ-character even at low (6%) Sn concentrations. The evolution of the Γ-character is due to Sn-induced conduction band mixing effects, in contrast to the sharp indirect-to-direct band gap transition obtained in conventional alloys such as Al1−xGaxAs. Understanding the band mixing effects is critical not only from a fundamental and basic properties viewpoint but also for designing photonic devices with enhanced capabilities utilizing GeSn and related material systems. en
dc.description.sponsorship EPSRC (Projects EP/H005587/01, and EP/N021037/1); Air Force Office of Scientific Research (AFOSR) (FA9550-14-1-0205) en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher Springer Nature en
dc.relation.uri https://www.nature.com/articles/s41598-019-50349-z
dc.rights © The Author(s) 2019. This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/. en
dc.rights.uri http://creativecommons.org/licenses/by/4.0/ en
dc.subject Electronic structure en
dc.subject Silicon photonics en
dc.subject Band mixing effects en
dc.title Ge1-xSnx alloys: Consequences of band mixing effects for the evolution of the band gap Γ-character with Sn concentration en
dc.type Article (peer-reviewed) en
dc.internal.authorcontactother Stefan Schulz, Tyndall National Institute, University College Cork, Cork, Ireland. +353-21-490-3000 Email:stefan.schulz@tyndall.ie en
dc.internal.availability Full text available en
dc.description.version Published Version en
dc.contributor.funder Engineering and Physical Sciences Research Council en
dc.contributor.funder Science Foundation Ireland en
dc.contributor.funder Air Force Office of Scientific Research en
dc.description.status Peer reviewed en
dc.identifier.journaltitle Scientific reports en
dc.internal.IRISemailaddress stefan.schulz@tyndall.ie en
dc.identifier.articleid 14077 en
dc.relation.project info:eu-repo/grantAgreement/SFI/SFI Starting Investigator Research Grant (SIRG)/13/SIRG/2210/IE/Shaping the electronic and optical properties of non- and semi-polar nitride-based semiconductor nanostructures/ en
dc.relation.project info:eu-repo/grantAgreement/SFI/SFI Investigator Programme/14/IA/2513/IE/Silicon Compatible, Direct Band-Gap Nanowire Materials For Beyond-CMOS Devices/ en
dc.relation.project info:eu-repo/grantAgreement/SFI/SFI Investigator Programme/15/IA/3082/IE/Multiscale Simulation and Analysis of emerging Group IV and III-V Semiconductor Materials and Devices/ en
dc.relation.project info:eu-repo/grantAgreement/NSF/Directorate for Mathematical & Physical Sciences::Division of Materials Research/1149605/US/CAREER: High Performance III-V-Bismide Mid-Infrared Semiconductor Lasers/ en
dc.identifier.eissn 2045-2322


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© The Author(s) 2019. This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/. Except where otherwise noted, this item's license is described as © The Author(s) 2019. This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.
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