Modeling and simulation of bulk gallium nitride power semiconductor devices
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Date
2016-05-03
Authors
Sabui, G.
Parbrook, Peter J.
Arredondo-Arechavala, Miryam
Shen, Z. J.
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Publisher
AIP Publishing
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Abstract
Bulk gallium nitride (GaN) power semiconductor devices are gaining significant interest in recent years, creating the need for technology computer aided design (TCAD) simulation to accurately model and optimize these devices. This paper comprehensively reviews and compares different GaN physical models and model parameters in the literature, and discusses the appropriate selection of these models and parameters for TCAD simulation. 2-D drift-diffusion semi-classical simulation is carried out for 2.6 kV and 3.7 kV bulk GaN vertical PN diodes. The simulated forward current-voltage and reverse breakdown characteristics are in good agreement with the measurement data even over a wide temperature range
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Keywords
Electronic engineering computing , Gallium compounds , III-V semiconductors , Power semiconductor diodes , Semiconductor device models , Technology CAD (electronics) , Wide band gap semiconductors
Citation
Sabui, G., Parbrook, P. J., Arredondo-Arechavala, M. and Shen, Z. J. (2016) 'Modeling and simulation of bulk gallium nitride power semiconductor devices', AIP Advances, 6(5), 055006. (15pp.) DOI: 10.1063/1.4948794