Modeling and simulation of bulk gallium nitride power semiconductor devices

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Modeling and simulation of bulk gallium nitride power semiconductor devices

Sabui, G.; Parbrook, Peter J.; Arredondo-Arechavala, Miryam; Shen, Z. J.
Date: 2016-05-03
Copyright: ©2016 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).
Copyright information: http://creativecommons.org/licenses/by/4.0/
Related: https://aip.scitation.org/doi/10.1063/1.4948794
Citation: Sabui, G., Parbrook, P. J., Arredondo-Arechavala, M. and Shen, Z. J. (2016) 'Modeling and simulation of bulk gallium nitride power semiconductor devices', AIP Advances, 6(5), 055006. (15pp.) DOI: 10.1063/1.4948794
Published Version: 10.1063/1.4948794

Abstract:

Bulk gallium nitride (GaN) power semiconductor devices are gaining significant interest in recent years, creating the need for technology computer aided design (TCAD) simulation to accurately model and optimize these devices. This paper comprehensively reviews and compares different GaN physical models and model parameters in the literature, and discusses the appropriate selection of these models and parameters for TCAD simulation. 2-D drift-diffusion semi-classical simulation is carried out for 2.6 kV and 3.7 kV bulk GaN vertical PN diodes. The simulated forward current-voltage and reverse breakdown characteristics are in good agreement with the measurement data even over a wide temperature range

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©2016 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/). Except where otherwise noted, this item's license is described as ©2016 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).
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