Herzog, B.; Lingnau, Benjamin; Kolarczik, M.; Helmrich, S.; Achtstein, A. W.; Thommes, K.; Alhussein, F.; Quandt, D.; Strittmatter, A.; Pohl, U. W.; Brox, O.; Weyers, M.; Woggon, U.; Lüdge, Kathy; Owschimikow, N.
(Institute of Electrical and Electronics Engineers (IEEE), 2019-05-29)
In this paper, we investigate the potential of submonolayer-grown InAs:Sb/GaAs quantum dots as active medium for opto-electronic devices emitting in the 1060 nm spectral range. Grown as multiple sheets of InAs in a GaAs ...