Modeling and simulation of bulk gallium nitride power semiconductor devices

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dc.contributor.author Sabui, G.
dc.contributor.author Parbrook, Peter J.
dc.contributor.author Arredondo-Arechavala, Miryam
dc.contributor.author Shen, Z. J.
dc.date.accessioned 2019-11-01T07:32:52Z
dc.date.available 2019-11-01T07:32:52Z
dc.date.issued 2016-05-03
dc.identifier.citation Sabui, G., Parbrook, P. J., Arredondo-Arechavala, M. and Shen, Z. J. (2016) 'Modeling and simulation of bulk gallium nitride power semiconductor devices', AIP Advances, 6(5), 055006. (15pp.) DOI: 10.1063/1.4948794 en
dc.identifier.volume 6 en
dc.identifier.issued 5 en
dc.identifier.startpage 1 en
dc.identifier.endpage 15 en
dc.identifier.uri http://hdl.handle.net/10468/8933
dc.identifier.doi 10.1063/1.4948794 en
dc.description.abstract Bulk gallium nitride (GaN) power semiconductor devices are gaining significant interest in recent years, creating the need for technology computer aided design (TCAD) simulation to accurately model and optimize these devices. This paper comprehensively reviews and compares different GaN physical models and model parameters in the literature, and discusses the appropriate selection of these models and parameters for TCAD simulation. 2-D drift-diffusion semi-classical simulation is carried out for 2.6 kV and 3.7 kV bulk GaN vertical PN diodes. The simulated forward current-voltage and reverse breakdown characteristics are in good agreement with the measurement data even over a wide temperature range en
dc.description.sponsorship U.S. National Science Foundation (Grant EECS-1407540) en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher AIP Publishing en
dc.relation.uri https://aip.scitation.org/doi/10.1063/1.4948794
dc.rights ©2016 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/). en
dc.rights.uri http://creativecommons.org/licenses/by/4.0/ en
dc.subject Electronic engineering computing en
dc.subject Gallium compounds en
dc.subject III-V semiconductors en
dc.subject Power semiconductor diodes en
dc.subject Semiconductor device models en
dc.subject Technology CAD (electronics) en
dc.subject Wide band gap semiconductors en
dc.title Modeling and simulation of bulk gallium nitride power semiconductor devices en
dc.type Article (peer-reviewed) en
dc.internal.authorcontactother Peter Parbrook, School of Engineering and Tyndall National Institute Institute, Lee Maltings Complex, Dyke Parade, University College Cork, Cork, Ireland. +353-21-490-3000 Email:p.parbrook@ucc.ie en
dc.internal.availability Full text available en
dc.description.version Published Version en
dc.contributor.funder National Science Foundation en
dc.description.status Peer reviewed en
dc.identifier.journaltitle AIP Advances en
dc.internal.IRISemailaddress p.parbrook@ucc.ie en
dc.identifier.articleid 055006 en
dc.identifier.eissn 2158-3226


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©2016 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/). Except where otherwise noted, this item's license is described as ©2016 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).
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