Back-gated Nb-doped MoS2 junctionless field-effect-transistors
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Date
2016-02-26
Authors
Mirabelli, Gioele
Schmidt, Michael
Brendan, Sheehan
Karim, Cherkaoui
Scott, Monaghan
Ian, Povey
Melissa, McCarthy
Bell, Alan P.
Nagle, Roger
Crupi, Felice
Journal Title
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Volume Title
Publisher
AIP Publishing
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Abstract
Electrical measurements were carried out to measure the performance and evaluate the characteristics of MoS2 flakes doped with Niobium (Nb). The flakes were obtained by mechanical exfoliation and transferred onto 85 nm thick SiO2 oxide and a highly doped Si handle wafer. Ti/Au (5/45 nm) deposited on top of the flake allowed the realization of a back-gate structure, which was analyzed structurally through Scanning Electron Microscopy (SEM) and Transmission Electron Microscopy (TEM). To best of our knowledge this is the first cross-sectional TEM study of exfoliated Nb-doped MoS2 flakes. In fact to date TEM of transition-metal-dichalcogenide flakes is extremely rare in the literature, considering the recent body of work. The devices were then electrically characterized by temperature dependent Ids versus Vds and Ids versus Vbg curves. The temperature dependency of the device shows a semiconductor behavior and, the doping effect by Nb atoms introduces acceptors in the structure, with a p-type concentration 4.3 × 1019 cm−3 measured by Hall effect. The p-type doping is confirmed by all the electrical measurements, making the structure a junctionless transistor. In addition, other parameters regarding the contact resistance between the top metal and MoS2 are extracted thanks to a simple Transfer Length Method (TLM) structure, showing a promising contact resistivity of 1.05 × 10−7 Ω/cm2 and a sheet resistance of 2.36 × 102 Ω/sq.
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Keywords
Contact resistance , Electrical conductivity , Field effect transistors , Gold , Hall effect , Molybdenum compounds , Niobium , Scanning electron microscopy , Semiconductor doping , Semiconductor materials , Semiconductor- metal boundaries , Titanium , Transmission electron mic
Citation
Mirabelli, G., Schmidt, M., Sheehan, B., Cherkaoui, K., Monaghan, S., Povey, I., McCarthy, M., Bell, A. P., Nagle, R., Crupi, F., Hurley, P. K. and Duffy, R. (2016) 'Back-gated Nb-doped MoS2 junctionless field-effect-transistors', AIP Advances, 6(2), 025323 (10pp) DOI: 10.1063/1.4943080