MoS2 radio: detecting radio waves with a two-dimensional transition metal dichalcogenide semiconductor
Dragoman, Mircea; Aldrigo, Martino; Connolly, James; Povey, Ian M.; Iordanescu, Sergiu; Dinescu, Adrian; Vasilache, Dan; Modreanu, Mircea
Date:
2019-11-07
Copyright:
© 2019, IOP Publishing Ltd. This Accepted Manuscript is available for reuse under a CC BY-NC-ND 3.0 licence after a 12 month embargo period. After the embargo period, everyone is permitted to use copy and redistribute this article for non-commercial purposes only, provided that they adhere to all the terms of the licence https://creativecommons.org/licences/by-nc-nd/3.0
Full text restriction information:
Access to this article is restricted until 12 months after publication by request of the publisher.
Restriction lift date:
2020-11-07
Citation:
Dragoman, M., Aldrigo, M., Connolly, J., Povey, I. M., Iordanescu, S., Dinescu, A., Vasilache, D. and Modreanu, M. (2019) 'MoS2 radio: detecting radio waves with a two-dimensional transition metal dichalcogenide semiconductor', Nanotechnology, 31(6), 06LT01 (6pp). doi: 10.1088/1361-6528/ab5123
Abstract:
In this paper, we designed, fabricated and tested a microwave circuit based on a MoS2 self-switching diode. The MoS2 thin film (10-monolayers nominal thickness) was grown on a 4 inch Al2O3/high-resistivity silicon wafer by chemical vapor deposition process. The Raman measurements confirm the high quality of the MoS2 over the whole area of the 4 inch wafer. We show experimentally that a microwave circuit based on a few-layers MoS2 self-switching diode fabricated at the wafer level is able to detect the audio spectrum from amplitude-modulated microwave signals in the band 0.9–10 GHz, i.e. in the frequency range mostly used by current wireless communications. In particular, the 900 MHz band is widely exploited for GSM applications, whereas the 3.6 GHz band has been identified as the primary pioneer band for 5G in the European Union.
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