Long-term stability of transparent n/p ZnO homojunctions grown by rf-sputtering at room-temperature

Abstract

ZnO-based n/p homojunctions were fabricated by sputtering from a single zinc nitride target at room temperature on metal or ITO-coated glass and Si substrates. A multi-target rf-sputtering system was used for the growth of all oxide films as multilayers in a single growth run without breaking the vacuum in the growth chamber. The nitrogen-containing films (less than 1.5 at.% of nitrogen) were n-type ZnO when deposited in oxygen-deficient Ar plasma (10% O2) and p-type ZnO when deposited in oxygen-rich Ar plasma (50% O2). The all-oxide homojunction ITO/n-ZnO/p-ZnO/ITO/glass was fabricated in a single deposition run and exhibited visible transparency in the range of 75–85%. The n/p ZnO homojunctions, having metallic contacts, formed on conventionally processed substrates showed a fairly unstable behavior concerning the current-voltage characteristics. However, the same homojunctions formed on Si3N4-patterned substrates and stored in atmosphere for a period of five months were stable exhibiting a turn-on voltage of around 1.5 V. The realization of a room temperature sputtered transparent and stable ZnO homojunction paves the way to the realization of all-oxide transparent optoelectronic devices.