Atomic layer deposition of metals: Precursors and film growth

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dc.contributor.author Hagen, D. J.
dc.contributor.author Pemble, Martyn E.
dc.contributor.author Karppinen, M.
dc.date.accessioned 2019-12-02T12:53:19Z
dc.date.available 2019-12-02T12:53:19Z
dc.date.issued 2019-11-05
dc.identifier.citation Hagen, D. J., Pemble, M. E. and Karppinen, M. (2019) 'Atomic layer deposition of metals: Precursors and film growth', Applied Physics Reviews, 6(4), 041309. doi: 10.1063/1.5087759 en
dc.identifier.volume 6 en
dc.identifier.issued 4 en
dc.identifier.uri http://hdl.handle.net/10468/9285
dc.identifier.doi 10.1063/1.5087759 en
dc.description.abstract The coating of complex three-dimensional structures with ultrathin metal films is of great interest for current technical applications, particularly in microelectronics, as well as for basic research on, for example, photonics or spintronics. While atomic layer deposition (ALD) has become a well-established fabrication method for thin oxide films on such geometries, attempts to develop ALD processes for elemental metal films have met with only mixed success. This can be understood by the lack of suitable precursors for many metals, the difficulty in reducing the metal cations to the metallic state, and the nature of metals as such, in particular their tendency to agglomerate to isolated islands. In this review, we will discuss these three challenges in detail for the example of Cu, for which ALD has been studied extensively due to its importance for microelectronic fabrication processes. Moreover, we give a comprehensive overview over metal ALD, ranging from a short summary of the early research on the ALD of the platinoid metals, which has meanwhile become an established technology, to very recent developments that target the ALD of electropositive metals. Finally, we discuss the most important applications of metal ALD. en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher AIP Publishing en
dc.relation.uri https://aip.scitation.org/doi/abs/10.1063/1.5087759
dc.rights © 2019, the Authors. Published by AIP Publishing. This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared as Hagen, D. J., Pemble, M. E. and Karppinen, M. (2019) 'Atomic layer deposition of metals: Precursors and film growth', Applied Physics Reviews, 6(4), 041309. doi: 10.1063/1.5087759, and may be found at https://doi.org/10.1063/1.5087759 en
dc.subject Atomic layer deposition en
dc.subject ALD en
dc.subject Elemental metal film en
dc.subject Cu en
dc.title Atomic layer deposition of metals: Precursors and film growth en
dc.type Article (peer-reviewed) en
dc.internal.authorcontactother Martyn Pemble, Chemistry, University College Cork, Cork, Ireland. +353-21-490-3000 Email: martyn.pemble@tyndall.ie en
dc.internal.availability Full text available en
dc.date.updated 2019-12-02T12:43:24Z
dc.description.version Accepted Version en
dc.internal.rssid 500042999
dc.contributor.funder Science Foundation Ireland en
dc.description.status Peer reviewed en
dc.identifier.journaltitle Applied Physics Reviews en
dc.internal.copyrightchecked Yes
dc.internal.licenseacceptance Yes en
dc.internal.IRISemailaddress martyn.pemble@tyndall.ie en
dc.identifier.articleid 041309 en
dc.internal.bibliocheck In press. Check page range. Amend citation and copyright statement as necessary. en
dc.relation.project info:eu-repo/grantAgreement/SFI/SFI Strategic Research Cluster/07/SRC/I1172/IE/SRC FORME: Functional Oxides and Related Materials for Electronics/ en
dc.relation.project info:eu-repo/grantAgreement/SFI/SFI Principal Investigator Programme (PI)/11/PI/1117/IE/New Materials and Devices for Optical Applications via the use of Hybrid Technologies: Colloidal Crystallisation and Advanced Thin Film Deposition/ en
dc.relation.project info:eu-repo/grantAgreement/SFI/SFI Investigator Programme/15/IA/3015/IE/Design, Deposition and Exploitation of Novel Micro and Nano-scale Materials and Devices for Advanced Manufacturing- DEPO-Man/ en
dc.identifier.eissn 1931-9401


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