Optical properties of metamorphic type-I InAs1-xSbx/AlyIn1-yAs quantum wells grown on GaAs for the mid-infrared spectral range

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dc.contributor.author Repiso, Eva
dc.contributor.author Broderick, Christopher A.
dc.contributor.author de la Mata, Maria
dc.contributor.author Arkani, Reza
dc.contributor.author Lu, Qi
dc.contributor.author Marshall, Andrew R. J.
dc.contributor.author Molina, Sergio I.
dc.contributor.author O'Reilly, Eoin P.
dc.contributor.author Carrington, Peter J.
dc.contributor.author Krier, Anthony
dc.date.accessioned 2019-12-03T10:18:03Z
dc.date.available 2019-12-03T10:18:03Z
dc.date.issued 2019-08-30
dc.identifier.citation Repiso, E., Broderick, C. A., de la Mata, M., Arkani, R., Lu, Q., Marshall, A. R. J., Molina, S. I., O’Reilly, E. P., Carrington, P. J. and Krier, A. (2019) 'Optical properties of metamorphic type-I InAs1−x Sb x /Al y In1−y As quantum wells grown on GaAs for the mid-infrared spectral range', Journal of Physics D: Applied Physics, 52(46), 465102. (11pp.) doi: 10.1088/1361-6463/ab37cf en
dc.identifier.volume 52 en
dc.identifier.issued 46 en
dc.identifier.startpage 1 en
dc.identifier.endpage 11 en
dc.identifier.issn 0022-3727
dc.identifier.uri http://hdl.handle.net/10468/9291
dc.identifier.doi 10.1088/1361-6463/ab37cf en
dc.description.abstract We analyse the optical properties of InAs1−x Sb x /Al y In1−y As quantum wells (QWs) grown by molecular beam epitaxy on relaxed Al y In1−y As metamorphic buffer layers (MBLs) using GaAs substrates. The use of Al y In1−y As MBLs allows for the growth of QWs having large type-I band offsets, and emission wavelengths  >3 m. Photoluminescence (PL) measurements for QWs having Sb compositions up to x  =  10% demonstrate strong room temperature PL up to 3.4 m, as well as enhancement of the PL intensity with increasing wavelength. To quantify the trends in the measured PL we calculate the QW spontaneous emission (SE), using a theoretical model based on an eight-band Hamiltonian. The theoretical calculations, which are in good agreement with experiment, identify that the observed enhancement in PL intensity with increasing wavelength is associated with the impact of compressive strain on the QW valence band structure, which reduces the band edge density of states making more carriers available to undergo radiative recombination at fixed carrier density. Our results highlight the potential of type-I InAs1−x Sb x /Al y In1−y As metamorphic QWs to address several limitations associated with existing heterostructures operating in the mid-infrared, establishing these novel heterostructures as a suitable platform for the development of light-emitting diodes and diode lasers. en
dc.description.sponsorship Royal Academy of Engineering (Research Fellowship no. 10216/114); Spanish Ministry of Economy and Competitiveness (MINECO; project no. TEC2017-86102-C2-2-R); Andalusian Research Council (PAI; research group TEP-946 INNANOMAT) en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher Institute of Physics Publishing en
dc.rights © 2019 IOP Publishing Ltd. Original content from this work may be used under the terms of the Creative Commons Attribution 3.0 licence. Any further distribution of this work must maintain attribution to the author(s) and the title of the work, journal citation and DOI. en
dc.rights.uri http://creativecommons.org/licenses/by/3.0 en
dc.subject Semiconductors en
dc.subject Photonics en
dc.subject Mid-infrared en
dc.subject Light-emitting diode en
dc.subject Metamorphic heterostructure en
dc.subject Molecular beam epitaxy en
dc.subject Modelling en
dc.title Optical properties of metamorphic type-I InAs1-xSbx/AlyIn1-yAs quantum wells grown on GaAs for the mid-infrared spectral range en
dc.type Article (peer-reviewed) en
dc.internal.authorcontactother Christopher Broderick, Department of Physics and Tyndall National Institute, University College Cork, Cork, Ireland. +353-21-490-3000 en
dc.internal.availability Full text available en
dc.description.version Published Version en
dc.contributor.funder European Commission en
dc.contributor.funder Science Foundation Ireland en
dc.contributor.funder Engineering and Physical Sciences Research Council en
dc.contributor.funder National University of Ireland en
dc.contributor.funder Royal Academy of Engineering en
dc.contributor.funder Spanish Ministry of Economy and Competitiveness en
dc.contributor.funder Andalusian Research Council en
dc.description.status Peer reviewed en
dc.identifier.journaltitle Journal of Physics D: Applied Physics en
dc.identifier.articleid 465102 en
dc.relation.project info:eu-repo/grantAgreement/EC/H2020::MSCA-ITN-ETN/641899/EU/Postgraduate Research on Dilute Metamorphic Nanostructures and Metamaterials in Semiconductor Photonics/PROMIS en
dc.relation.project info:eu-repo/grantAgreement/SFI/SFI Investigator Programme/15/IA/3082/IE/Multiscale Simulation and Analysis of emerging Group IV and III-V Semiconductor Materials and Devices/ en
dc.relation.project info:eu-repo/grantAgreement/RCUK/EPSRC/EP/N018605/1/GB/Novel InSb quantum dots monolithically grown on silicon for low cost mid-infrared light emitting diodes/ en
dc.identifier.eissn 1361-6463


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© 2019 IOP Publishing Ltd. Original content from this work may be used under the terms of the Creative Commons Attribution 3.0 licence. Any further distribution of this work must maintain attribution to the author(s) and the title of the work, journal citation and DOI. Except where otherwise noted, this item's license is described as © 2019 IOP Publishing Ltd. Original content from this work may be used under the terms of the Creative Commons Attribution 3.0 licence. Any further distribution of this work must maintain attribution to the author(s) and the title of the work, journal citation and DOI.
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