CMOS-Compatible titanium nitride for on-chip plasmonic Schottky photodetectors

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dc.contributor.author Gosciniak, Jacek
dc.contributor.author Atar, Fatih B.
dc.contributor.author Corbett, Brian
dc.contributor.author Rasras, Mahmoud
dc.date.accessioned 2019-12-03T10:31:31Z
dc.date.available 2019-12-03T10:31:31Z
dc.date.issued 2019-10-07
dc.identifier.citation Gosciniak, J., Atar, F. B., Corbett, B. and Rasras, M. (2019) 'CMOS-Compatible Titanium Nitride for On-Chip Plasmonic Schottky Photodetectors', ACS Omega, 4(17), pp. 17223-17229. doi: 10.1021/acsomega.9b01705 en
dc.identifier.volume 4 en
dc.identifier.issued 17 en
dc.identifier.startpage 17223 en
dc.identifier.endpage 17229 en
dc.identifier.uri http://hdl.handle.net/10468/9292
dc.identifier.doi 10.1021/acsomega.9b01705 en
dc.description.abstract Here, we propose a waveguide-integrated plasmonic Schottky photodetector (PD) operating based on an internal photoemission process with a titanium nitride plasmonic material. The theoretically examined structure employs an asymmetric metal–semiconductor–metal waveguide configuration with one of the electrodes being gold and the second being either gold, titanium, or titanium nitride. For the first time, we measured a Schottky barrier height of 0.67 eV for titanium nitride on p-doped silicon, which is very close to the optimal value of 0.697 eV. This barrier height will enable photodetection with a high signal-to-noise ratio when operating at a wavelength of 1550 nm. In addition to the measured optical properties of high absorption losses and reasonably large real part of the permittivity that are desired for this type of PD, titanium nitride is also compatible with easy integration on existing complementary metal–oxide–semiconductor technology. The use of titanium nitride results in a shorter penetration depth of the optical mode into the metal when compared to Ti, which in turn enhances the probability for transmission of hot electrons to the adjacent semiconductor, giving rise to an enhancement in responsivity. en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher American Chemical Society en
dc.rights ©2019 American Chemical Society. This is an open access article published under a Creative Commons Attribution (CC-BY) License, which permits unrestricted use, distribution and reproduction in any medium, provided the author and source are cited. en
dc.rights.uri https://creativecommons.org/licenses/by/3.0/ en
dc.subject CMOS en
dc.subject Titanium Nitride en
dc.subject Plasmonic en
dc.subject On-chip en
dc.subject Schottky photodetectors en
dc.title CMOS-Compatible titanium nitride for on-chip plasmonic Schottky photodetectors en
dc.type Article (peer-reviewed) en
dc.internal.authorcontactother Faith Atar, Tyndall National Institute, University College Cork, Cork, Ireland. +353-21-490-3000 Email:fatih.atar@tyndall.ie en
dc.internal.availability Full text available en
dc.description.version Published Version en
dc.contributor.funder New York University Abu Dhabi en
dc.description.status Peer reviewed en
dc.identifier.journaltitle ACS Omega en
dc.internal.IRISemailaddress fatih.atar@tyndall.ie en
dc.identifier.eissn 2470-1343


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©2019 American Chemical Society. This is an open access article published under a Creative Commons Attribution (CC-BY) License, which permits unrestricted use, distribution and reproduction in any medium, provided the author and source are cited. Except where otherwise noted, this item's license is described as ©2019 American Chemical Society. This is an open access article published under a Creative Commons Attribution (CC-BY) License, which permits unrestricted use, distribution and reproduction in any medium, provided the author and source are cited.
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