Scanning electron microscope as a flexible tool for investigating the properties of UV-emitting nitride semiconductor thin films

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dc.contributor.author Trager-Cowan, C.
dc.contributor.author Alasmari, A.
dc.contributor.author Avis, W.
dc.contributor.author Bruckbauer, J.
dc.contributor.author Edwards, P. R.
dc.contributor.author Hourahine, B.
dc.contributor.author Kraeusel, S.
dc.contributor.author Kusch, G.
dc.contributor.author Johnston, R.
dc.contributor.author Naresh-Kumar, G.
dc.contributor.author Martin, R. W.
dc.contributor.author Nouf-Allehiani, M.
dc.contributor.author Pascal, E.
dc.contributor.author Spasevski, L.
dc.contributor.author Thomson, D.
dc.contributor.author Vespucci, S.
dc.contributor.author Parbrook, Peter J.
dc.contributor.author Smith, M. D.
dc.contributor.author Enslin, J.
dc.contributor.author Mehnke, F.
dc.contributor.author Kneissl, M.
dc.contributor.author Kuhn, C.
dc.contributor.author Wernicke, T.
dc.contributor.author Hagedorn, S.
dc.contributor.author Knauer, A.
dc.contributor.author Kueller, V.
dc.contributor.author Walde, S.
dc.contributor.author Weyers, M.
dc.contributor.author Coulon, P. M.
dc.contributor.author Shields, P. A.
dc.contributor.author Zhang, Y.
dc.contributor.author Jiu, L.
dc.contributor.author Gong, Y.
dc.contributor.author Smith, R. M.
dc.contributor.author Wang, T.
dc.contributor.author Winkelmann, A.
dc.date.accessioned 2019-12-05T11:56:57Z
dc.date.available 2019-12-05T11:56:57Z
dc.date.issued 2019-10-30
dc.identifier.citation Trager-Cowan, C., Alasmari, A., Avis, W., Bruckbauer, J., Edwards, P. R., Hourahine, B., Kraeusel, S., Kusch, G., Johnston, R., Naresh-Kumar, G., Martin, R. W., Nouf-Allehiani, M., Pascal, E., Spasevski, L., Thomson, D., Vespucci, S., Parbrook, P. J., Smith, M. D., Enslin, J., Mehnke, F., Kneissl, M., Kuhn, C., Wernicke, T., Hagedorn, S., Knauer, A., Kueller, V., Walde, S., Weyers, M., Coulon, P. M., Shields, P. A., Zhang, Y., Jiu, L., Gong, Y., Smith, R. M., Wang, T. and Winkelmann, A. (2019) 'Scanning electron microscopy as a flexible technique for investigating the properties of UV-emitting nitride semiconductor thin films', Photonics Research, 7(11), pp. 73-82. doi: 10.1364/PRJ.7.000B73 en
dc.identifier.volume 7 en
dc.identifier.issued 11 en
dc.identifier.startpage 73 en
dc.identifier.endpage 82 en
dc.identifier.uri http://hdl.handle.net/10468/9342
dc.identifier.doi 10.1364/PRJ.7.000B73 en
dc.description.abstract In this paper we describe the scanning electron microscopy techniques of electron backscatter diffraction, electron channeling contrast imaging, wavelength dispersive X-ray spectroscopy, and cathodoluminescence hyperspectral imaging. We present our recent results on the use of these non-destructive techniques to obtain information on the topography, crystal misorientation, defect distributions, composition, doping, and light emission from a range of UV-emitting nitride semiconductor structures. We aim to illustrate the developing capability of each of these techniques for understanding the properties of UV-emitting nitride semiconductors, and the benefits were appropriate, in combining the techniques. en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher OSA - The Optical Society en
dc.rights © The Author(s) 2019. Published by Chinese Laser Press under the terms of the Creative Commons Attribution 4.0 License. Further distribution of this work must maintain attribution to the author(s) and the published article’s title, journal citation, and DOI en
dc.rights.uri http://creativecommons.org/licenses/by/4.0/ en
dc.subject Electron microscopy en
dc.subject UV-emitting nitride en
dc.subject Semiconductor en
dc.title Scanning electron microscope as a flexible tool for investigating the properties of UV-emitting nitride semiconductor thin films en
dc.type Article (peer-reviewed) en
dc.internal.authorcontactother Peter Parbrook, Tyndall National Institute, University College Cork, Cork, Ireland. +353-21-490-3000 Email:peter.parbrook@tyndall.ie en
dc.internal.availability Full text available en
dc.description.version Published Version en
dc.contributor.funder Engineering and Physical Sciences Research Council en
dc.contributor.funder Technische Universität Berlin en
dc.contributor.funder Bundesministerium für Bildung und Forschung en
dc.contributor.funder Deutsche Forschungsgemeinschaft en
dc.description.status Peer reviewed en
dc.identifier.journaltitle Photonics Research en
dc.internal.IRISemailaddress peter.parbrook@tyndall.ie en
dc.relation.project info:eu-repo/grantAgreement/RCUK/EPSRC/EP/J015792/1/GB/Nanoscale characterisation of nitride semiconductor thin films using EBSD, ECCI, CL and EBIC./ en
dc.relation.project info:eu-repo/grantAgreement/RCUK/EPSRC/EP/M015181/1/GB/Manufacturing of nano-engineered III-nitride semiconductors/ en
dc.relation.project info:eu-repo/grantAgreement/RCUK/EPSRC/EP/P015719/1/GB/Quantitative non-destructive nanoscale characterisation of advanced materials/ en
dc.identifier.eissn 2327-9125


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© The Author(s) 2019. Published by Chinese Laser Press under the terms of the Creative Commons Attribution 4.0 License. Further distribution of this work must maintain attribution to the author(s) and the published article’s title, journal citation, and DOI Except where otherwise noted, this item's license is described as © The Author(s) 2019. Published by Chinese Laser Press under the terms of the Creative Commons Attribution 4.0 License. Further distribution of this work must maintain attribution to the author(s) and the published article’s title, journal citation, and DOI
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