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| dc.contributor.author | Trager-Cowan, C. | |
| dc.contributor.author | Alasmari, A. | |
| dc.contributor.author | Avis, W. | |
| dc.contributor.author | Bruckbauer, J. | |
| dc.contributor.author | Edwards, P. R. | |
| dc.contributor.author | Hourahine, B. | |
| dc.contributor.author | Kraeusel, S. | |
| dc.contributor.author | Kusch, G. | |
| dc.contributor.author | Johnston, R. | |
| dc.contributor.author | Naresh-Kumar, G. | |
| dc.contributor.author | Martin, R. W. | |
| dc.contributor.author | Nouf-Allehiani, M. | |
| dc.contributor.author | Pascal, E. | |
| dc.contributor.author | Spasevski, L. | |
| dc.contributor.author | Thomson, D. | |
| dc.contributor.author | Vespucci, S. | |
| dc.contributor.author | Parbrook, Peter J. | |
| dc.contributor.author | Smith, M. D. | |
| dc.contributor.author | Enslin, J. | |
| dc.contributor.author | Mehnke, F. | |
| dc.contributor.author | Kneissl, M. | |
| dc.contributor.author | Kuhn, C. | |
| dc.contributor.author | Wernicke, T. | |
| dc.contributor.author | Hagedorn, S. | |
| dc.contributor.author | Knauer, A. | |
| dc.contributor.author | Kueller, V. | |
| dc.contributor.author | Walde, S. | |
| dc.contributor.author | Weyers, M. | |
| dc.contributor.author | Coulon, P. M. | |
| dc.contributor.author | Shields, P. A. | |
| dc.contributor.author | Zhang, Y. | |
| dc.contributor.author | Jiu, L. | |
| dc.contributor.author | Gong, Y. | |
| dc.contributor.author | Smith, R. M. | |
| dc.contributor.author | Wang, T. | |
| dc.contributor.author | Winkelmann, A. | |
| dc.date.accessioned | 2019-12-05T11:56:57Z | |
| dc.date.available | 2019-12-05T11:56:57Z | |
| dc.date.issued | 2019-10-30 | |
| dc.identifier.citation | Trager-Cowan, C., Alasmari, A., Avis, W., Bruckbauer, J., Edwards, P. R., Hourahine, B., Kraeusel, S., Kusch, G., Johnston, R., Naresh-Kumar, G., Martin, R. W., Nouf-Allehiani, M., Pascal, E., Spasevski, L., Thomson, D., Vespucci, S., Parbrook, P. J., Smith, M. D., Enslin, J., Mehnke, F., Kneissl, M., Kuhn, C., Wernicke, T., Hagedorn, S., Knauer, A., Kueller, V., Walde, S., Weyers, M., Coulon, P. M., Shields, P. A., Zhang, Y., Jiu, L., Gong, Y., Smith, R. M., Wang, T. and Winkelmann, A. (2019) 'Scanning electron microscopy as a flexible technique for investigating the properties of UV-emitting nitride semiconductor thin films', Photonics Research, 7(11), pp. 73-82. doi: 10.1364/PRJ.7.000B73 | en |
| dc.identifier.volume | 7 | en |
| dc.identifier.issued | 11 | en |
| dc.identifier.startpage | 73 | en |
| dc.identifier.endpage | 82 | en |
| dc.identifier.uri | http://hdl.handle.net/10468/9342 | |
| dc.identifier.doi | 10.1364/PRJ.7.000B73 | en |
| dc.description.abstract | In this paper we describe the scanning electron microscopy techniques of electron backscatter diffraction, electron channeling contrast imaging, wavelength dispersive X-ray spectroscopy, and cathodoluminescence hyperspectral imaging. We present our recent results on the use of these non-destructive techniques to obtain information on the topography, crystal misorientation, defect distributions, composition, doping, and light emission from a range of UV-emitting nitride semiconductor structures. We aim to illustrate the developing capability of each of these techniques for understanding the properties of UV-emitting nitride semiconductors, and the benefits were appropriate, in combining the techniques. | en |
| dc.format.mimetype | application/pdf | en |
| dc.language.iso | en | en |
| dc.publisher | OSA - The Optical Society | en |
| dc.rights | © The Author(s) 2019. Published by Chinese Laser Press under the terms of the Creative Commons Attribution 4.0 License. Further distribution of this work must maintain attribution to the author(s) and the published article’s title, journal citation, and DOI | en |
| dc.rights.uri | http://creativecommons.org/licenses/by/4.0/ | en |
| dc.subject | Electron microscopy | en |
| dc.subject | UV-emitting nitride | en |
| dc.subject | Semiconductor | en |
| dc.title | Scanning electron microscope as a flexible tool for investigating the properties of UV-emitting nitride semiconductor thin films | en |
| dc.type | Article (peer-reviewed) | en |
| dc.internal.authorcontactother | Peter Parbrook, Tyndall National Institute, University College Cork, Cork, Ireland. +353-21-490-3000 Email:peter.parbrook@tyndall.ie | en |
| dc.internal.availability | Full text available | en |
| dc.description.version | Published Version | en |
| dc.contributor.funder | Engineering and Physical Sciences Research Council
|
en |
| dc.contributor.funder | Technische Universität Berlin
|
en |
| dc.contributor.funder | Bundesministerium für Bildung und Forschung
|
en |
| dc.contributor.funder | Deutsche Forschungsgemeinschaft
|
en |
| dc.description.status | Peer reviewed | en |
| dc.identifier.journaltitle | Photonics Research | en |
| dc.internal.IRISemailaddress | peter.parbrook@tyndall.ie | en |
| dc.relation.project | info:eu-repo/grantAgreement/RCUK/EPSRC/EP/J015792/1/GB/Nanoscale characterisation of nitride semiconductor thin films using EBSD, ECCI, CL and EBIC./
|
en |
| dc.relation.project | info:eu-repo/grantAgreement/RCUK/EPSRC/EP/M015181/1/GB/Manufacturing of nano-engineered III-nitride semiconductors/
|
en |
| dc.relation.project | info:eu-repo/grantAgreement/RCUK/EPSRC/EP/P015719/1/GB/Quantitative non-destructive nanoscale characterisation of advanced materials/
|
en |
| dc.identifier.eissn | 2327-9125 |
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Except where otherwise noted, this item's license is described as © The Author(s) 2019. Published by Chinese Laser Press under the terms of the Creative Commons Attribution 4.0 License. Further distribution of this work must maintain attribution to the author(s) and the published article’s title, journal citation, and DOI