Optical properties of c-Plane InGaN/GaN single quantum wells as a function of total electric field strength

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dc.contributor.author Christian, George M.
dc.contributor.author Schulz, Stefan
dc.contributor.author Hammersley, Simon
dc.contributor.author Kappers, Menno J.
dc.contributor.author Frentrup, Martin
dc.contributor.author Humphreys, Colin J.
dc.contributor.author Oliver, Rachel A.
dc.contributor.author Dawson, Philip
dc.date.accessioned 2020-01-20T11:46:28Z
dc.date.available 2020-01-20T11:46:28Z
dc.date.issued 2019-04-23
dc.identifier.citation Christian, G. M., Schulz, S., Hammersley, S., Kappers, M. J., Frentrup, M., Humphreys, C. J., Oliver, R. A. and Dawson, P. (2019) 'Optical properties of c-Plane InGaN/GaN single quantum wells as a function of total electric field strength', Japanese Journal of Applied Physics, 58, SCCB09 (7pp). doi: 10.7567/1347-4065/ab0407 en
dc.identifier.volume 58 en
dc.identifier.startpage 1 en
dc.identifier.endpage 7 en
dc.identifier.issn 0021-4922
dc.identifier.uri http://hdl.handle.net/10468/9531
dc.identifier.doi 10.7567/1347-4065/ab0407 en
dc.description.abstract We present low temperature photoluminescence spectra from four InGaN/GaN single quantum well structures where the total electric field across the quantum wells was varied by the manipulation of the surface polarization field, which is of opposite sign to the electrostatic built-in field originating from spontaneous and piezoelectric polarization intrinsic to the material. We find that, overall, the photoluminescence peak emission energy increases and its full width at half maximum decreases with decreasing total internal electric field. Using an atomistic tight-binding model of a quantum well with different total internal electric fields, we find that the calculated mean and standard deviation ground state transition energies follow the same trends with field as our experimentally determined spectral peak energies and widths. Overall, we attribute this behavior to a reduction in the quantum confined Stark effect and a connected reduction in the variation of ground state transition energies with decreasing electric field, respectively. en
dc.description.sponsorship Engineering and Physical Sciences Research Council (Grants No. EP/I012591/1; No. EP/M010627/1; No. EP/M010589/1) en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher IOP Publishing en
dc.relation.uri http://dx.doi.org/10.7567/1347-4065/ab0407
dc.relation.uri https://data.mendeley.com/datasets/5c9b7283td/1
dc.rights © 2019, The Japan Society of Applied Physics. Published by IOP Publishing. This Accepted Manuscript is available for reuse under a CC BY-NC-ND 3.0 licence after the 12 month embargo period provided that all the terms of the licence are adhered to. en
dc.rights.uri https://creativecommons.org/licenses/by-nc-nd/3.0/
dc.subject Photoluminescence peak emission energy en
dc.subject Decreasing total internal electric field en
dc.subject Quantum well en
dc.subject Stark effect en
dc.subject Electric field en
dc.title Optical properties of c-Plane InGaN/GaN single quantum wells as a function of total electric field strength en
dc.type Article (peer-reviewed) en
dc.internal.authorcontactother Stefan Schulz, Tyndall Theory Modelling & Design Centre, University College Cork, Cork, Ireland. +353-21-490-3000 Email: stefan.schulz@tyndall.ie en
dc.internal.availability Full text available en
dc.check.info Access to this article is restricted until 12 months after publication by request of the publisher. en
dc.check.date 2020-04-23
dc.date.updated 2020-01-20T11:24:29Z
dc.description.version Accepted Version en
dc.internal.rssid 500175592
dc.contributor.funder Engineering and Physical Sciences Research Council en
dc.contributor.funder Science Foundation Ireland en
dc.description.status Peer reviewed en
dc.identifier.journaltitle Japanese Journal of Applied Physics en
dc.internal.copyrightchecked Yes
dc.internal.licenseacceptance Yes en
dc.internal.IRISemailaddress stefan.schulz@tyndall.ie en
dc.identifier.articleid SCCB09 en
dc.relation.project info:eu-repo/grantAgreement/SFI/SFI Starting Investigator Research Grant (SIRG)/13/SIRG/2210/IE/Shaping the electronic and optical properties of non- and semi-polar nitride-based semiconductor nanostructures/ en
dc.identifier.eissn 1347-4065


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© 2019, The Japan Society of Applied Physics. Published by IOP Publishing. This Accepted Manuscript is available for reuse under a CC BY-NC-ND 3.0 licence after the 12 month embargo period provided that all the terms of the licence are adhered to. Except where otherwise noted, this item's license is described as © 2019, The Japan Society of Applied Physics. Published by IOP Publishing. This Accepted Manuscript is available for reuse under a CC BY-NC-ND 3.0 licence after the 12 month embargo period provided that all the terms of the licence are adhered to.
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