Reduction of threading dislocation density in top-down fabricated GaN nanocolumns via their lateral overgrowth by MOCVD

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dc.contributor.author Zubialevich, Vitaly Z.
dc.contributor.author McLaren, Mathew
dc.contributor.author Pampili, Pietro
dc.contributor.author Shen, John
dc.contributor.author Arredondo-Arechavala, Miryam
dc.contributor.author Parbrook, Peter J.
dc.date.accessioned 2020-01-21T09:47:09Z
dc.date.available 2020-01-21T09:47:09Z
dc.date.issued 2020-01-13
dc.identifier.citation Zubialevich, V. Z., McLaren, M., Pampili, P., Shen, J., Arredondo-Arechavala, M. and Parbrook, P. J. (2020) 'Reduction of threading dislocation density in top-down fabricated GaN nanocolumns via their lateral overgrowth by MOCVD', Journal of Applied Physics, 127(2), 25306 (7pp). doi: 10.1063/1.5110602 en
dc.identifier.volume 127 en
dc.identifier.issued 2 en
dc.identifier.startpage 1 en
dc.identifier.endpage 7 en
dc.identifier.issn 0021-8979
dc.identifier.uri http://hdl.handle.net/10468/9538
dc.identifier.doi 10.1063/1.5110602 en
dc.description.abstract Reduction of threading dislocation density in top-down fabricated GaN nanocolumns (NCs) via their successive lateral shrinkage by anisotropic wet etch and lateral overgrowth by metalorganic chemical vapor deposition is studied by transmission electron microscopy. The fabrication process involves a combination of dry and wet etches to produce NC arrays of a low fill factor (<5%), which are then annealed and laterally overgrown to increase the array fill factor to around 20%–30%. The resulting NC arrays show a reduction in threading dislocation density of at least 25 times, allowing for the reduction in material volume due to the array fill factor, with dislocations being observed to bend into the voids between NCs during the overgrowth process. en
dc.description.sponsorship Higher Education Authority (Programme for Research in Third Level Institutions Cycles 4 and 5 via the INSPIRE and TYFFANI projects); Department for the Economy, Northern Ireland (U.S.-Ireland R&D Partnership Programme Grant No. USI-058); National Science Foundation (Grant No. EECS-1407540); Science Foundation Ireland (Grant No. SFI-18/TIDA/6066) en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher AIP Publishing en
dc.relation.uri https://aip.scitation.org/doi/abs/10.1063/1.5110602
dc.rights © 2020, the Authors. Published under license by AIP Publishing. This article may be downloaded for personal use only. Any other use requires prior permission of the authors and AIP Publishing. This article appeared as Zubialevich, V. Z., McLaren, M., Pampili, P., Shen, J., Arredondo-Arechavala, M. and Parbrook, P. J. (2020) 'Reduction of threading dislocation density in top-down fabricated GaN nanocolumns via their lateral overgrowth by MOCVD', Journal of Applied Physics, 127(2), 25306 (7pp), doi: 10.1063/1.5110602and may be found at https://aip.scitation.org/doi/full/10.1063/1.5110602 en
dc.subject Threading dislocation density en
dc.subject Successive lateral shrinkage en
dc.subject Anisotropic wet etch en
dc.subject Lateral overgrowth en
dc.subject Metalorganic chemical vapor deposition en
dc.subject Transmission electron microscopy en
dc.subject Top-down fabricated GaN nanocolumns en
dc.subject NC en
dc.title Reduction of threading dislocation density in top-down fabricated GaN nanocolumns via their lateral overgrowth by MOCVD en
dc.type Article (peer-reviewed) en
dc.internal.authorcontactother Peter James Parbrook, Electrical & Electronic Engineering, University College Cork, Cork, Ireland. +353-21-490-3000 Email: p.parbrook@ucc.ie en
dc.internal.availability Full text available en
dc.check.info Access to this article is restricted until 12 months after publication by request of the publisher. en
dc.check.date 2021-01-13
dc.date.updated 2020-01-21T09:32:43Z
dc.description.version Published Version en
dc.internal.rssid 500175833
dc.contributor.funder Science Foundation Ireland en
dc.contributor.funder Higher Education Authority en
dc.contributor.funder Department for the Economy, Northern Ireland en
dc.contributor.funder National Science Foundation en
dc.description.status Peer reviewed en
dc.identifier.journaltitle Journal of Applied Physics en
dc.internal.copyrightchecked Yes
dc.internal.licenseacceptance Yes en
dc.internal.IRISemailaddress p.parbrook@ucc.ie en
dc.identifier.articleid 25306 en
dc.relation.project info:eu-repo/grantAgreement/SFI/SFI US Ireland R&D Partnership/13/US/I2860/IE/US-Ireland Collaborative Research on Nano-GaN Power Electronic Devices/ en
dc.relation.project info:eu-repo/grantAgreement/SFI/SFI Stokes Professorship & Lectureship Programme/07/EN/E001A/IE/Peter Parbrook/ en
dc.identifier.eissn 1089-7550


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