Effect of strain and diameter on electronic and charge transport properties of indium arsenide nanowires

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dc.contributor.author Razavi, Pedram
dc.contributor.author Greer, James C.
dc.date.accessioned 2020-02-18T16:00:05Z
dc.date.available 2020-02-18T16:00:05Z
dc.date.issued 2018-08-04
dc.identifier.citation Razavi, P. and Greer, J. C. (2018) 'Effect of strain and diameter on electronic and charge transport properties of indium arsenide nanowires', Solid-State Electronics, 149, pp. 6-14. doi: 10.1016/j.sse.2018.08.001 en
dc.identifier.volume 149 en
dc.identifier.startpage 6 en
dc.identifier.endpage 14 en
dc.identifier.issn 0038-1101
dc.identifier.uri http://hdl.handle.net/10468/9663
dc.identifier.doi 10.1016/j.sse.2018.08.001 en
dc.description.abstract The impact of uni-axial compressive and tensile strain and diameter on the electronic band structure of indium arsenide (InAs) nanowires (NWs) is investigated using first principles calculations. Effective masses and band gaps are extracted from the electronic structure for relaxed and strained nanowires. Material properties are extracted and applied to determine charge transport through the NWs described within the effective mass approximation and by applying the non-equilibrium Green’s function method. The transport calculations self-consistently solve the Schrödinger equation with open boundary conditions and Poisson’s equation for the electrostatics. The device structure corresponds to a metal oxide semiconductor field effect transistor (MOSFET) with an InAs NW channel in a gate-all-around geometry. The channel cross sections are for highly scaled devices within a range of 3 × 3–1 × 1 nm2. Strain effects on the band structures and electrical performance are evaluated for different NW orientations and diameters by quantifying subthreshold swing and ON/OFF current ratio. Our results reveal for InAs NW transistors with critical dimensions of a few nanometer, the crystallographic orientation and quantum confinement effects dominate device behavior, nonetheless strain effects must be included to provide accurate predictions of transistor performance. en
dc.description.sponsorship Science Foundation Ireland and Higher Education Authority (SFI/HEA Irish Centre for High-EndComputing (ICHEC)) en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher Elsevier
dc.relation.uri http://www.sciencedirect.com/science/article/pii/S0038110118300911
dc.rights © 2018 Elsevier Ltd. All rights reserved. This manuscript version is made available under the CC BY-NC-ND 4.0 licence. en
dc.rights.uri https://creativecommons.org/licenses/by-nc-nd/4.0/ en
dc.subject InAs nanowires en
dc.subject Strain en
dc.subject Charge transport en
dc.subject Semiconductors en
dc.subject DFT en
dc.subject Meta-GGA en
dc.title Effect of strain and diameter on electronic and charge transport properties of indium arsenide nanowires en
dc.type Article (peer-reviewed) en
dc.internal.authorcontactother Pedram Razavi, Tyndall National Institute, University College Cork, Cork, Ireland. +353-21-490-3000 Email: pedram.razavi@tyndall.ie en
dc.internal.availability Full text available en
dc.check.info Access to this article is restricted until 24 months after publication by request of the publisher. en
dc.check.date 2020-08-04
dc.date.updated 2020-02-18T15:52:13Z
dc.description.version Accepted Version en
dc.internal.rssid 503136245
dc.contributor.funder Seventh Framework Programme en
dc.contributor.funder Science Foundation Ireland en
dc.contributor.funder Higher Education Authority en
dc.description.status Peer reviewed en
dc.identifier.journaltitle Solid-State Electronics en
dc.internal.copyrightchecked Yes
dc.internal.licenseacceptance Yes en
dc.internal.IRISemailaddress pedram.razavi@tyndall.ie en
dc.relation.project info:eu-repo/grantAgreement/EC/FP7::SP1::NMP/604416/EU/From atom-to-Device Explicit simulation Environment for Photonics and Electronics Nanostructures/DEEPEN en
dc.relation.project info:eu-repo/grantAgreement/SFI/SFI Investigator Programme/13/IA/1956/IE/SMALL: Semi-Metal ALL-in-One Technologies/ en


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© 2018 Elsevier Ltd. All rights reserved. This manuscript version is made available under the CC BY-NC-ND 4.0 licence. Except where otherwise noted, this item's license is described as © 2018 Elsevier Ltd. All rights reserved. This manuscript version is made available under the CC BY-NC-ND 4.0 licence.
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