Ultraviolet stimulated emission in AlGaN layers grown on sapphire substrates using ammonia and plasma-assisted molecular beam epitaxy

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dc.contributor.author Rzheutski, Mikalai V.
dc.contributor.author Lutsenko, Evgenii V.
dc.contributor.author Vainilovich, Aliaksei G.
dc.contributor.author Svitsiankou, Illia E.
dc.contributor.author Nahorny, Aliaksei V.
dc.contributor.author Yablonskii, Gennadii P.
dc.contributor.author Zubialevich, Vitaly Z.
dc.contributor.author Petrov, Stanislav I.
dc.contributor.author Alexeev, Alexey N.
dc.contributor.author Nechaev, Dmitrii V.
dc.contributor.author Jmerik, Valentin N.
dc.date.accessioned 2020-03-10T16:39:03Z
dc.date.available 2020-03-10T16:39:03Z
dc.date.issued 2020-03-03
dc.identifier.citation Rzheutski, M. V., Lutsenko, E. V., Vainilovich, A. G., Svitsiankou, I. E., Nahorny, A. V., Yablonskii, G. P., Zubialevich, V. Z., Petrov, S. I., Alexeev, A. N., Nechaev, D. V. and Jmerik, V. N. 'Ultraviolet Stimulated Emission in AlGaN Layers Grown on Sapphire Substrates using Ammonia and Plasma-Assisted Molecular Beam Epitaxy', Physica Status Solidi (A), doi: 10.1002/pssa.201900927 en
dc.identifier.startpage 1 en
dc.identifier.endpage 16 en
dc.identifier.issn 1862-6300
dc.identifier.uri http://hdl.handle.net/10468/9745
dc.identifier.doi 10.1002/pssa.201900927 en
dc.description.abstract Ammonia and plasma‐assisted (PA) molecular beam epitaxy modes are used to grow AlN and AlGaN epitaxial layers on sapphire substrates. It is determined that the increase of thickness of AlN buffer layer grown by ammonia‐MBE from 0.32 μm to 1.25 μm results in the narrowing of 101 X‐Ray rocking curves whereas no clear effect on 002 X‐Ray rocking curve width is observed. It is shown that strong GaN decomposition during growth by ammonia‐MBE causes AlGaN surface roughening and compositional inhomogeneity, which leads to deterioration of its lasing properties. AlGaN layers grown by ammonia‐MBE at optimized temperature demonstrate stimulated emission (SE) peaked at λ = 330 nm, 323 nm, 303 nm and 297 nm with the SE threshold values of 0.7 MW cm−2, 1.1 MW cm−2, 1.4 MW cm−2 and 1.4 MW cm−2, respectively. In comparison to these, AlGaN layer grown using PA‐MBE pulsed modes (migration‐enhanced epitaxy, metal‐modulated epitaxy, and droplet elimination by thermal annealing) shows a SE with a relatively low threshold (0.8 MW cm−2) at the considerably shorter wavelength of λ = 267 nm. en
dc.description.sponsorship National Academy of Sciences of Belarus (State Programs of Scientific Research of Belarus “Photonics, opto- and microelectronics” 2.1.01; 2.1.04); Russian Science Foundation (Grant #19-72-30040) en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher Wiley en
dc.relation.uri https://onlinelibrary.wiley.com/doi/abs/10.1002/pssa.201900927
dc.rights © 2020. This article is protected by copyright. All rights reserved. This is the peer reviewed version of the following article: Rzheutski, M.V., Lutsenko, E.V., Vainilovich, A.G., Svitsiankou, I.E., Nahorny, A.V., Yablonskii, G.P., Zubialevich, V.Z., Petrov, S.I., Alexeev, A.N., Nechaev, D.V. and Jmerik, V.N. (2020), Ultraviolet Stimulated Emission in AlGaN Layers Grown on Sapphire Substrates using Ammonia and Plasma‐Assisted Molecular Beam Epitaxy. Phys. Status Solidi A. Accepted Author Manuscript, which will be published in final form at https://doi.org/10.1002/pssa.201900927. This article may be used for non-commercial purposes in accordance with Wiley Terms and Conditions for Self-Archiving en
dc.subject AlGaN en
dc.subject AlN en
dc.subject Molecular beam epitaxy en
dc.subject Stimulated emission en
dc.subject Structural properties en
dc.title Ultraviolet stimulated emission in AlGaN layers grown on sapphire substrates using ammonia and plasma-assisted molecular beam epitaxy en
dc.type Article (peer-reviewed) en
dc.internal.authorcontactother Vitaly Zubialevich, Tyndall Photonics, University College Cork, Cork, Ireland. +353-21-490-3000 Email: vitaly.zubialevich@tyndall.ie en
dc.internal.availability Full text available en
dc.check.info Access to this article is restricted until 12 months after publication by request of the publisher en
dc.check.date 2021-03-03
dc.date.updated 2020-03-10T16:25:39Z
dc.description.version Accepted Version en
dc.internal.rssid 505705693
dc.contributor.funder Russian Science Foundation en
dc.contributor.funder National Academy of Sciences of Belarus en
dc.description.status Peer reviewed en
dc.identifier.journaltitle Physica Status Solidi (A) en
dc.internal.copyrightchecked Yes
dc.internal.licenseacceptance Yes en
dc.internal.IRISemailaddress vitaly.zubialevich@tyndall.ie en
dc.internal.bibliocheck In press. Check vol / issue / page range. Update citation, rights statement en

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